Performance of immersion lithography for 45-nm-node CMOS and ultra-high density SRAM with 0.25um2

Performance of immersion lithography for 45-nm-node CMOS and ultra-high density SRAM with 0.25um2

Author(s):

S. Mimotogi ( Toshiba Corp. (Japan) )

F. Uesawa ( Sony Corp. (Japan) )

M. Tominaga ( NEC Electronics Corp. (Japan) )

H. Fujise ( Toshiba Corp. (Japan) )

K. Sho ( Toshiba Corp. (Japan) )

M. Katsumata ( Sony Corp. (Japan) )

H. Hane ( Sony Corp. (Japan) )

A. Ikegami ( Sony Corp. (Japan) )

S. Nagahara ( NEC Electronics (Japan) )

T. Ema ( Toshiba Corp. (Japan) )

M. Asano ( Toshiba Corp. (Japan) )

H. Kanai ( Toshiba Corp. (Japan) )

T. Kimura ( Toshiba Corp. (Japan) )

M. Iwai ( Toshiba Corp. (Japan) )

9 more

Publication title:

Optical microlithography XX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

6520

Pub. Year:

2007

Pub. info.:

Bellingham, Wash.: SPIE - The International Society of Optical Engineering

ISSN:

0277786X

ISBN:

9780819466396 [0819466395]

Language:

English

Call no.:

P63600/6520

Type:

Conference Proceedings

Details

TDL ID:	ZA00046827
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical Microlithography
Conf. info. (Number):	2007 : 20th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2007.02.27-2007.03.02

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