1.

Conference Proceedings
Conference Proceedings
1. Localized Gold Electrodeposition onto p-type Silicon surfaces
L. Santinacci ; T. Djenizian ; A. Etcheberry ; P. Schmuki
Pub. info.: Electrochemical Processing in ULSI and MEMS 3.  pp.209-222,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(8)
2.

Conference Proceedings
Conference Proceedings
2. Evolution of Surface Terminations and Electrochemical Behaviors of Boron Doped Diamond Electrodes Induced by Controlled Anodic and Cathodic Pretreatements
N. Simon ; H. Girard ; D. Ballutaud ; E. De la Rochefoucauld ; A. Etcheberry
Pub. info.: Multifunctional Carbon Materials for Electrochemical and Electronic Applications.  pp.59-66,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(28)
3.

Conference Proceedings
Conference Proceedings
3. Electrochemical and Photo-Electrochemical Properties of Porous n-InP Layers
L. Santinacci ; A. Goncalves ; A. Etcheberry
Pub. info.: State-of-the-art program on compound semiconductors 46 (SOTAPOCS 46) and processes at the semiconductor/solution interface 2.  pp.323-330,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(2)
4.

Conference Proceedings
Conference Proceedings
4. The Role of the Surface Chemistry on the Evolution of Kinetic of Hole Injection by Fe(CN)₆ 3- at n-InP
A. Etcheberry ; N. Simon ; I. Gérard
Pub. info.: State-of-the-art program on compound semiconductors 46 (SOTAPOCS 46) and processes at the semiconductor/solution interface 2.  pp.469-474,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(2)
5.

Conference Proceedings
Conference Proceedings
5. A Significant Anodic Passivation of n and p-InP Surfaces in Liquid Ammonia: First Evidence of Stable Phosphorus-Nitrogen Bonds
A. Goncalves ; O. Seilz ; A. Eb ; C. Maihieu ; M. Herlem ; A. Etcheberry
Pub. info.: State-of-the-art program on compound semiconductors 46 (SOTAPOCS 46) and processes at the semiconductor/solution interface 2.  pp.461-468,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(2)
6.

Conference Proceedings
Conference Proceedings
6. Growth and Formation of Thin Anodic Films on InP
N. Simon ; A. Etcheberry
Pub. info.: State-of-the-art program on compound semiconductors 46 (SOTAPOCS 46) and processes at the semiconductor/solution interface 2.  pp.453-460,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(2)
7.

Conference Proceedings
Conference Proceedings
7. Challenging the Electrodeposition of Multinary Semiconductor Compounds: Case of CuInSe₂
E. Chassaing ; O. G. Roussel ; O. Ramdani ; P. Grand ; B. Canava ; A. Etcheberry ; J. Guillemoles ; D. Lincot
Pub. info.: State-of-the-art program on compound semiconductors 46 (SOTAPOCS 46) and processes at the semiconductor/solution interface 2.  pp.577-586,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(2)
8.

Conference Proceedings
Conference Proceedings
8. Growth of a Porous Layer on InP in Liquid Ammonia: A Specific Interfacial Behavior
A. Eb ; A.M. Gonçalves ; C. Mathieu ; A. Etcheberry
Pub. info.: Porous semiconductors : a symposium held in memory of Vitali Parkhutik and Volker Lehmann.  pp.417-424,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(3)
9.

Conference Proceedings
Conference Proceedings
9. Comments About the Mechanism of Porous Layer Growth: Case of InP
L. Santinacci ; I. Gérard ; M. Bouttemy ; M. Marques ; A. Etcheberry
Pub. info.: Porous semiconductors : a symposium held in memory of Vitali Parkhutik and Volker Lehmann.  pp.411-416,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(3)