1.

Conference Proceedings
Conference Proceedings
1. Electrical Passivation of the (100)Ge Surface by Its Thermal Oxide
F. Bellenger ; M. Houssa ; A. Delabie ; T. Conard ; M. Caymax
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.451-459,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
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Conference Proceedings
Conference Proceedings
2. Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications
A. Delabie ; L. Nyns ; F. Bellenger ; M. Caymax ; T. Conard
Pub. info.: Atomic layer deposition applications 3.  pp.227-241,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(7)
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Conference Proceedings
Conference Proceedings
3. HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle
L. Nyns ; A. Delabie ; M. Caymax ; M.M. Heyns ; S. Van Elshocht
Pub. info.: Atomic layer deposition applications 4.  pp.257-267,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(4)
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Conference Proceedings
Conference Proceedings
4. Replacing SiO2 - Material and Processing Aspects of New Dielectrics
S. de Gendt ; C. Adelmann ; A. Delabie ; L. Nyns ; G. Pourtois
Pub. info.: Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing.  pp.3-13,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(2)
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Conference Proceedings
Conference Proceedings
5. Impact of Hf-Precursor Choice on Scaling and Performance of High-κ Gate Dielectrics
J. Maes ; Y. Fedorenko ; A. Delabie ; L. Ragnarsson ; J. Swerts
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.59-72,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
6.

Conference Proceedings
Conference Proceedings
6. Atomic Layer Deposition of HfO2 on (100) and (110) Oriented Silicon Surfaces
L. Nyns ; L. Ragnarsson ; L. Hall ; A. Delabie ; M. Heyns
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.73-77,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
7.

Conference Proceedings
Conference Proceedings
7. ALD La-Based Oxides for Vt-Tuning in High-Κ/Metal Gate Stacks
J. Swerts ; Y. Fedorenko ; J. Maes ; E. Tois ; A. Delabie
Pub. info.: Atomic layer deposition applications 3.  pp.201-211,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(7)
8.

Conference Proceedings
Conference Proceedings
8. Wet Etch Characteristics of Hafnium Silicate Layers
M. Claes ; V. Paraschiv ; D. Dictus ; T. Conard ; W. Boullari ; S. Vanhaelemeersch ; S. De Gendt ; A. Delabie ; S. Van Elshoclst ; C. Zhao ; J. Everaert
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.633-644,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
9.

Conference Proceedings
Conference Proceedings
9. Atomic Layer Deposition of High-k Dielectric Layers on Ge and III-V MOS Channels
A. Delabie ; A. Alian ; F. Bellenger ; G. Brammertz ; D.P. Brunco
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.671-685,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)