1.

Conference Proceedings
Conference Proceedings
1. Chromium(VI)-free Defect Etching Solutions for Application on Engineered Silicon Substrates
J. Maehliss ; A. Abbadie ; F. Brunier ; B.O. Kolbesen
Pub. info.: High Purity Silicon 10.  pp.309-320,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(6)
2.

Conference Proceedings
Conference Proceedings
2. A Review of Different and Promising Defect Etching Techniques: from Si to Ge
A. Abbadie ; J.-M. Hartmann ; F. Brunier
Pub. info.: Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007) (plus Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes).  pp.3-19,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 10(1)
3.

Conference Proceedings
Conference Proceedings
3. Structural Properties of Tensile-Strained Si Layers Grown on Si0.6Ge0.4 and Si0.5Ge0.5 Virtual Substrates
J. Hartmann ; A. Abbadie ; D. Rouchon ; Y. Guinche ; P. Holliger
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.309-311,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
4.

Conference Proceedings
Conference Proceedings
4. A Chromium-free Defect Etching Solution for Application on SOI
J. Maehliss ; A. Abbadie ; B. Kolbesen
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.271-278,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
5.

Conference Proceedings
Conference Proceedings
5. Comparison of Different Etching Techniques in Order to Reveal Dislocations in Thick Ge Layers
A. Abbadie ; J. Hartmann ; C. Deguel ; L. Sanchez ; F. Brunier ; F. Letertre
Pub. info.: Silicon-on-insulator technology and devices 13.  pp.263-270,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(4)
6.

Conference Proceedings
Conference Proceedings
6. Wet-Cleaning and Surface Characterization of Si₁₋xGex Relaxed Alloys (x=0.2-0.5) After Polishing: Applications for SGOI and Strained Silicon Structures Elaboration
A. Abbadie ; J. M. Hartmann ; P. Besson ; D. Rouchon ; P. Holliger ; C. Di Nardo ; T. Lardin ; Y. Campidelli ; B. Ghyselen ; T. Billon
Pub. info.: State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI.  pp.130-132,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(2)