1.

Conference Proceedings
Conference Proceedings
1. THE EFFECT OF Xe ION BEAM TREATMENT ON THE INTERACTION BETWEEN GOLD AND GaAs
Pearton, S. J. ; Pecz, B. ; Radnoczi, G. ; Jorvath, Zs. J. ; Barna, P. B. ; Jaroli, Erika ; Gyulai, J.
Pub. info.: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.293-298,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 260
2.

Conference Proceedings
Conference Proceedings
2. ANISOTROPIC REACTIVE ION ETCHING OF SUBMICRON W FEATURES IN CF4 OR SF6 PLASMAS
Fullowan, T. R. ; Ren, F. ; Pearton, S. J. ; Mahoney, G. E. ; Kostelak, R. L.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.315-322,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
3.

Conference Proceedings
Conference Proceedings
3. DRY ETCH SELF-ALIGNED AlInAs/InGaAs HETEROJUNCTION BIPOLAR TRANSISTORS
Fullowan, T. R. ; Pearton, S. J. ; Kopf, R. F. ; Ren, F. ; Chen, Y. K. ; Smith, P. R. ; Chin, C. A. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.285-292,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
4.

Conference Proceedings
Conference Proceedings
4. ELECTRON CYCLOTRON RESONANCE PLASMA PROCESSING OF GaAs-AlGaAs HEMT STRUCTURES
Pearton, S. J. ; Ren, F. ; Lothian, J. R. ; Fullowan, T. R. ; Kopf, R. F. ; Chakrabati, U. K. ; Hui, S. P. ; Emerson, A. B. ; Pei, S. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.293-300,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
5.

Conference Proceedings
Conference Proceedings
5. RAPID GROWTH KINETICS, MECHANICAL PROPERTIES AND THERMAL STABILITY OF SiOδ THIN FILMS GROWN BY RAPID THERMAL LOW PRESSURE CHEMICAL VAPOR DEPOSITION
Feingold, A. ; Katz, A. ; Pearton, S. J. ; Chakrabati, U. K. ; Jones, K. S.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.425-430,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
6.

Conference Proceedings
Conference Proceedings
6. *FORMATION OF OHMIC CONTACTS TO InP BY MEANS OF RAPID THERMAL LOW PRESSURE (METALORGANIC) CHEMICAL VAPOR DEPOSITION (RT-LPMOCVD) TECHNIQUE
Katz, A. ; Feingold, A. ; Pearton, S. J. ; Nakahara, S. ; Lane, E. ; Geva, M.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.393-408,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
7.

Conference Proceedings
Conference Proceedings
7. WET AND DRY ETCHING OF InGaP
Lothian, J. R. ; Kuo, J. M. ; Pearton, S. J. ; Ren, F.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.307-314,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
8.

Conference Proceedings
Conference Proceedings
8. IMPROVEMENT OF OHMIC CONTACTS ON GaAs WITH IN-SITU CLEANING
Ren, F. ; Pearton, S. J. ; Fullowan, T. R. ; Hobson, W. S. ; Chu, S. N. G. ; Emerson, A. B.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.417-424,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
9.

Conference Proceedings
Conference Proceedings
9. DRY ETCH DAMAGE IN GaAs P-N JUNCTIONS
Pearton, S. J. ; Abernathy, C. R.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.301-306,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
10.

Conference Proceedings
Conference Proceedings
10. USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs
Ren, F. ; Emerson, A. B. ; Pearton, S. J. ; Hobson, W. S. ; Fullowan, T. R. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.409-416,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
11.

Conference Proceedings
Conference Proceedings
11. ION IMPLANTATION DOPING OF InGaP, InGaAs, AND InAIAl
Pearton, S. J. ; Kuo, J. M. ; Hobson, W. S. ; Hailemarian, E. ; Ren, F. ; Katz, A. ; Perley, A. P.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.797-804,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
12.

Conference Proceedings
Conference Proceedings
12. RADIATION TESTING OF AlInAs/InGaAs AND GaAs/AlGaAs HBTs
Witmer, S. B. ; Mittleman, S. ; Lehy, D. ; Ren, F. ; Fullowan, T. R. ; Kopf, R. F. ; Abernathy, C. R. ; Pearton, S. J. ; Humphrey, D. A. ; Monthgomery, R. K. ; Smith, P. R. ; Kreskovsky, J. P. ; Grubin, H. L.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.523-530,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
13.

Conference Proceedings
Conference Proceedings
13. *SELF-ALIGNED, METAL-MASKED DRY ETCH PROCESSING OF III-V ELECTRONIC AND PHOTONIC DEVICES
Pearton, S. J. ; Katz, A. ; Feingold A ; Ren, F. ; Fullowan, T. R. ; Lothian, J. R ; Abernathy, C. R.
Pub. info.: Advanced metallization and processing for semiconductor devices and circuits--II : symposium held April 27-May 1, 1992, San Francisco, California, U.S.A..  pp.19-30,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 260
14.

Conference Proceedings
Conference Proceedings
14. COMPARISON OF DISILANE AND TETRAETHYLTIN AS GASEOUS DOPANTS FOR GROWTH OF n-GaAs AND n-AlGaAs BY MOMBE
Wisk, P. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Fullowan, T. ; Lothian, J.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.63-68,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
15.

Conference Proceedings
Conference Proceedings
15. GROWTH OF GaAs AND AlGaAs BY MOMBE USING PHENYLARSINE
Abernathy, C. R. ; Wisk, P. ; Pearton, S. J. ; Ren, F. ; Bohling, D. A. ; Muhr, G. T.
Pub. info.: Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.57-62,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 240
16.

Conference Proceedings
Conference Proceedings
16. USE OF SELECTIVE AREA DEFECT CREATION FOR ISOLATION OF III-V MULTILAYER STRUCTURES
Pearton, S. J. ; Ren, F. ; Fullowan, T. R, ; Katz, A. ; Hobson, W. S. ; Abernaty, C. R. ; Lothian, J., R. ; D'Asaro, L. A. ; Elliman, R. G. ; Ridgway, M. C. ; Jagadish, C. ; Williams,. J. S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.763-768,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
17.

Conference Proceedings
Conference Proceedings
17. COMPARISON OF CURRENT-INDUCED MIGRATION OF Be AND C IN GaAs.A1GaAs HBTs
Ren, F. ; Fullowan, T. R. ; Lochian, J. R. ; Wisk, P.W. ; Abernathy, C. R. ; Kopf, R.F ; Emerson, A. B. ; Downey, S. W. ; Pearton, S. J.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.797-802,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
18.

Conference Proceedings
Conference Proceedings
18. HI/H2 ECR PLASMA ETCHING OF III-V SEMICONDUCTORS
Pearton, S. J. ; Chakrabarti, U. K. ; Katz, A. ; Ren, F. ; Fullowan, T. R. ; Abernathy, C R. ; Hobson, W. S.
Pub. info.: Materials modification by energetic atoms and ions : symposium held April 28-30, 1992, San Francisco, California, U.S.A..  pp.17-22,  1992.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 268