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16 results

Conference Proceedings

1. A NEW METASTABLE DEFECT IN SILICON, OPTICAL PROPERTIES AND AN INVESTIGATION OF THE MECHANISM CAUSING THE CONFIGURATIONAL CHANGE

Svensson, J.H. ; Monemar, B.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.265-268, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

2. OPTICAL PROPERTIES OF NOVEL VIBRONIC BANDS IN ELECTRON-IRRADIATED TIN DOPED SILICON

Svensson, J.H. ; Monemar, B. ; Svensson, B.G.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.261-264, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

3. ELECTRONIC STRUCTURE OF TWO SULPHUR-RELATED BOUND EXCITONS IN SILICON STUDIED BY OPTICAL DETECTION OF MAGNETIC RESONANCE

Chen, W.M. ; Henry, A. ; Janzen, E. ; Monemar, B. ; Thewalt, M.L.W.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.303-306, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

4. DEFECT-FORMATION DEPENDENCE ON GROUP V-DOPANT ATOMS IN ELECTRON-IRRADIATED SILICON

Awadelkarim, O.O. ; Henry, A. ; Monemar, B. ; Lindstrom, J.L.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.283-286, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

5. MODIFIED OPTICALLY DETECTED MAGNETIC RESONANCE TECHNIQUE FOR STUDIES OF DEFECTS IN Si AND GaAs

Chen, W.M. ; Monemar, B.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.85-88, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

6. EFFECTS OF CONFINEMENT ON THE OPTICAL PROPERTIES OF A SHALLOW ACCEPTOR AND ITS BOUND EXCITON IN NARROW GaAs/A1GaAs QUANTUM WELLS

Holtz, P.O. ; Sundaram, M. ; Rune, G.C. ; Monemar, B. ; Merz, J.L. ; Gossard, A.C.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.331-336, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

7. OPTICALLY DETECTED MAGNETIC RESONANCE OF A HYDROGEN-RELATED COMPLEX DEFECT IN SILICON

Chen, W.M. ; Awadelkarim, O.O. ; Monemar, B. ; Lindstrom, J.L. ; Oehrlein, G.S.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.377-382, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

8. INTRINSIC LUMINESCENCE OF GaAs/A1GaAs HETEROJUNCTIONS INA TRANSVERSE ELECTRIC FIELD

Zhao, Q.X. ; Bergman, J.P. ; Holtz, P.O. ; Monemar, B. ; Hallin, C. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.337-342, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

9. DECAY MEASUREMENTS OF FRE AND BOUND EXCITON RECOMBINATION IN DOPED GaAs/GaA1As QUANTUM WELLS

Bergman, J.P. ; Holtz, P.O. ; Monemar, B. ; Sundaram, M. ; Merz, J.L. ; Gossard, A.C.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.325-330, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

10.

Conference Proceedings

10. *COMPLEX DEFECTS IN SEMICONDUCTORS

Monemar, B.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.39-50, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

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