1.

Conference Proceedings
Conference Proceedings
1. Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy
Kawasuso, A. ; Weidner, M. ; Redmann, F. ; Frank, T. ; Krause-Rehberg, R. ; Pensl, G. ; Sperr, P. ; Triftshauser, W. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.489-492,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
Barthe, M.-F. ; Desgardin, P. ; Henry, L. ; Corbel, C. ; Britton, D.T. ; Koegel, G. ; Sperr, P. ; Triftshauser, W. ; Vicente, P. ; diCioccio, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.493-496,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
Barthe, M.-F. ; Desgardin, P. ; Henry, L. ; Corbel, C. ; Britton, D.T. ; Kogel, G. ; Sperr, P. ; Triftshauser, W. ; Vicente, P. ; diCioccio, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.493-496,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient Spectroscopy
Kawasuso, A. ; Weidner, M. ; Redmann, F. ; Frank, T. ; Krause-Rehberg, R. ; Pensl, G. ; Sperr, P. ; Triftshauser, W. ; Itoh, H.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.489-492,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393