Search records | 東京科学大学図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Science Tokyo, Ookayama Library and Suzukakedai Library hold.
Members (from Ookayama, Suzukakedai and Tamachi campus）can obtain tables of contents of 17,000 foreign journals by SwetScan. The libraries do not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

54 results

Conference Proceedings

1. Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding Energy

Ivanov, I.G. ; Zhang, J. ; Storasta, L. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.613-616, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar Transistors

Danielsson, E. ; Zetterling, C.-M. ; Ostling, M. ; Forsberg, U. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1337-1340, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Structural Defects in Electrically Degraded 4H-SiC PiN Diodes

Persson, P.O.A. ; Jacobson, H. ; Molina-Aldareguia, J.M. ; Bergman, J.P. ; Tuomi, T. ; Clegg, W.J. ; Janzen, E. ; Hultman, L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.423-426, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Behavior of Micropipes during Growth in 4H-SiC

Vouroutzis, N. ; Yakimova, R. ; Syvaejaervi, M. ; Jacobson, H. ; Stoemenos, J. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.395-398, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC

Kassamakova, L. ; Kakanakov, R. ; Yakimova, R. ; Kakanakova-Georgieva, A. ; Syvaejaervi, M. ; Wilzen, L. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.929-932, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

6. Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density

Syrkin, A. ; Dmitriev, V. ; Yakimova, R. ; Henry, A. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1173-1176, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect Transistors

Koo, S.-M. ; Lee, S.-K. ; Zetterling, C.-M. ; Ostling, M. ; Forsberg, U. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1235-1238, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

8. Characterisation and Defects in Silicon Carbide

Bergman, J.P. ; Jakobsson, H. ; Storasta, L. ; Carlsson, F.H.C. ; Magnusson, B. ; Sridhara, S.G. ; Pozina, G. ; Lendenmann, H. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.9-14, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Lateral Enlargement of Silicon Carbide Crystals

Jacobson, H. ; Yakimova, R. ; Raback, P. ; Syvajarvi, M. ; Birch, J. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.39-42, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process Parameters

Forsberg, U. ; Danielsson, O. ; Henry, A. ; Linnarsson, M.K. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.203-206, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

54 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by: