1.

Conference Proceedings
Conference Proceedings
1. Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE
Polyakov, A. Y. ; Govorkov, A. V. ; Smirnov, N. B. ; Shin, M. ; Skowronski, M. ; Greve, D. W.
Pub. info.: III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.591-,  1997.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 449
2.

Conference Proceedings
Conference Proceedings
2. Deep Levels in High Resistivity AlGaN Films Grown by MOCVD
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Redwing, J. M.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.239-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
3.

Conference Proceedings
Conference Proceedings
3. Persistent Photoconductivity in AlGaN Films Grown by MOCVD
Polyakov, A. Y. ; Smirnov, N. B. ; Govorkov, A. V. ; Redwing, J. M.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.537-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
4.

Conference Proceedings
Conference Proceedings
4. FERMI LEVEL PINNING IN Au SCHOTTKY BARRIERS ON InGaP AND InGaAlP
Gorbylev, V. A. ; Chelniy, A. A. ; Chekalin, A. A. ; Polyakov, A. Y. ; Pearton, S. J. ; Smirnov, N. B. ; Govorkov, A. V. ; Leiferov, B. M. ; Popova, E. V. ; Kusikov, V. A. ; Balmashnov, A. A.
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.265-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340
5.

Conference Proceedings
Conference Proceedings
5. DOPING EFFICIENCY AND DEEP TRAPS IN MOCVD-GROWN InGaAlP AS INFLUENCED BY STOICHI0METRY AND HYDROGEN PASSIVATION
Gorbylev, V. A. ; Chelniy, A. A. ; Chekalin, A. A. ; Polyakov, A. Y. ; Pearton, S. J. ; Smirnov, N. B. ; Govorkov, A. V. ; Leiferov, B. M. ; Popova, E. V. ; Kusikov, V. A. ; Balmashnov, A. A.
Pub. info.: Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A..  pp.301-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 340