1.

Conference Proceedings
Conference Proceedings
1. GaN Power Devices
Pearton, S.J. ; Ren, F. ; Zhang, A.P. ; Dang, G. ; Cac, X.A. ; Lee, K.P. ; Cho, H. ; Gila, B.P. ; Johnson, J.W. ; Monier, C. ; Abernathy, C.R. ; Han, J. ; Baca, A.G. ; Chyi, J.-I. ; Lee, C.-M. ; Nee, T.-E. ; Chuo, C.-C. ; Chi, G.C. ; Chu, S.N.G.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.99-113,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
2.

Conference Proceedings
Conference Proceedings
2. Cantilever Epitaxy: A Simple Lateral Growth Technique for Reducing Dislocation Densities in GaN and Other Nitrides
Ashby, C.I.H. ; Willan, C.C. ; Han, J. ; Missert, N.A. ; Provencio, P.P. ; Follstaedt, D.M. ; Peake, G.M. ; Griego, L.
Pub. info.: High Speed Compound Semiconductor Devices for Wireless Applications and State-of-the-Art Program on Compound Semiconductors (XXXIII) : proceedings of the International Symposium.  pp.132-139,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-18
3.

Conference Proceedings
Conference Proceedings
3. AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances
Monier, C. ; Baca, A.G. ; Pearton, S.J. ; Ren, F. ; Chang, P.C. ; Zhang, L. ; LaRoche, J.R. ; Han, J. ; Shut, R.J.
Pub. info.: Compound semiconductor power transistors II : proceedings of the second international symposium and state-of-the-art program on compound semiconductors (SOTAPOCS XXXII) : proceedings of the thirty-second international symposium.  pp.34-42,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-1
4.

Conference Proceedings
Conference Proceedings
4. Comparison of implant isolation species for GaN field-effect transistor structure
Dang, G. ; Cao, X. A. ; Ren, F. ; Pearton, S. J. ; Han, J. ; Baca, A. G. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.68.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
5.

Conference Proceedings
Conference Proceedings
5. Processing and device performance of GaN power rectifiers
Zhang, A. P. ; Dang, G. T. ; Cao, X. A. ; Cho, H. ; Ren, F. ; Han, J. ; Chyi, J-I. ; Lee, C-M. ; Nee, T-E. ; Chuo, C-C. ; Chi, G-C. ; Chu, S. N. G. ; Wilson, R. G. ; Pearton, S. J.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.67.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
6.

Conference Proceedings
Conference Proceedings
6. *Properties and effects of hydrogen in GaN
Pearton, S. J. ; Cho, H. ; Ren, F. ; Chyi, J-I. ; Han, J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W10.6.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
7.

Conference Proceedings
Conference Proceedings
7. Lattice location of deuterium in plasma and gas charged Mg doped GaN
Wampler, W. R. ; Barbour, J. C. ; Seager, C. H. ; Myers, S. M. ; Wright, A. F. ; Han, J.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W10.7.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
8.

Conference Proceedings
Conference Proceedings
8. Optical spectroscopy of InGaN epilayers in the low indium composition regime
Crawford, M. H. ; Han, J. ; Banas, M. A. ; Myers, S. M. ; Petersen, G. A. ; Figiel, J. J.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.41.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
9.

Conference Proceedings
Conference Proceedings
9. Growth of InN by MBE
Chen, W-L. ; Gunshor, R. L. ; Han, J. ; Higashimine, K. ; Otsuka, N.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W3.30.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
10.

Conference Proceedings
Conference Proceedings
10. Optimal design of reactors for metalorganic vapor phase epitaxy of group III nitrides
Pawlowski, R. P. ; Theodoropoulos, C. ; Mountziaris, T. J. ; Moffat, H. K. ; Han, J. ; Thrush, E. J.
Pub. info.: New methods, mechanisms and models of vapor deposition : symposium held April 24-26, 2000, San Francisco, California, U.S.A..  pp.159-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 616