1.

Conference Proceedings
Conference Proceedings
1. CHARACTERIZATION OF LEAD ZIRCONATE TITANATE (PZT)-INDIUM TIN OXIDE (ITO) THIN FILM INTERFACE
Sreenivas, K. ; Sayer, M. ; Laursen, T. ; Whitton, J.L. ; Pascual, R. ; Johnson, D.J. ; Amm, D.T. ; Sproule, G.I. ; Mitchell, D.F. ; Graham, M.J. ; Gujrathi, S. C. ; Oxorn, K.
Pub. info.: Ferroelectric thin films : symposium held April 16-20, 1990, San Francisco, California, U.S.A..  pp.255-260,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 200
2.

Conference Proceedings
Conference Proceedings
2. The Structure and Composition of Thermal Oxides Formed on GaAs at 500℃
Hussey, R.J. ; Sproule, G.I. ; Graham, M.J.
Pub. info.: Proceedings of the Twenty-Seventh State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVII).  pp.305-316,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-21
3.

Conference Proceedings
Conference Proceedings
3. Structural and Electrical Characterization of Nanocrystalline Silicon Super- lattices
Groin, L.Tsybeskov; G.F. ; Fauchet, P.M. ; McCaffrey, J.P. ; Baribeau J.-M. ; Labbe, H.J. ; Sproule, G.I. ; Lockwood, D.J.
Pub. info.: Proceedings of the Fifth International Symposium on Quantum Confinement : nanostructures.  pp.76-93,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-19
4.

Conference Proceedings
Conference Proceedings
4. Growth and characterization of room temperature anodic Si02 films
Bardwell, J.A. ; Clark, K.B. ; Mitchell, D.F. ; Bisaillion, D.A. ; Sproule, G.I. ; MacDougall, B. ; Graham, M.J.
Pub. info.: Proceedings of the Second International Symposium on Electrochemical Technology Applications in Electronics.  pp.303-312,  1993.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1993-20
5.

Conference Proceedings
Conference Proceedings
5. Properties of Gate-Quality Silicon Nitride and Oxynitride Dielectrics Deposited Using an Electron Cyclotron-Resonance Plasma Source
Landheer, D. ; Hulse, J.E. ; Quance, T. ; Aers, G.C. ; Sproule, G.I. ; Lennard, W.N. ; Simpson, P.J. ; Nlassoumi, G.R.
Pub. info.: Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium.  pp.75-89,  1999.  Pennington, New Jersey.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-6
6.

Conference Proceedings
Conference Proceedings
6. Characterization of (I00)InP after surface passivation as studied by AFM, XPS and SIMS
Maurice, V. ; Marcus, P. ; Mason, B. ; Lu, Z.H. ; Gao, L.J. ; Sproule, G.I. ; Sundersena Rao, T. ; Graham, M.J.
Pub. info.: ALTECH 95 : analytical techniques for semiconductor materials and process characterization II : proceedings of the Satellite Symposium to ESSDERC 95, The Hague, The Netherlands.  pp.253-262,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-30