MBE-grown 1.3 micron InGaAsN/GaAs double QW VCSELs with very low-threshold current density under room temperature CW operation
- Author(s):
Lai, C.-M. ( Industrial Technology Research Institute (Taiwan) ) Wang, J.-S. ( Industrial Technology Research Institute (Taiwan) ) Hsiao, R.-S. ( Industrial Technology Research Institute (Taiwan) and National Chiao Tung Univ. (Taiwan) ) Wei, L.-C. ( Industrial Technology Research Institute (Taiwan) ) Lin, G. ( Industrial Technology Research Institute (Taiwan) ) Lin, K.-F. ( Industrial Technology Research Institute (Taiwan) ) Liu, H.-Y. ( Industrial Technology Research Institute (Taiwan) ) Kovsh, A.R. ( A.F. Ioffe Physico Technical Institute (Russia) ) Maleev, N.N. ( A.F. Ioffe Physico Technical Institute (Russia) ) Livshits, D.A. ( A.F. Ioffe Physico Technical Institute (Russia) ) Chen, J.-F. ( National Chiao Tung Univ. (Taiwan) ) Chi, J.-Y. ( Industrial Technology Research Institute (Taiwan) ) - Publication title:
- Semiconductor Lasers and Laser Dynamics
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5452
- Pub. Year:
- 2004
- Page(from):
- 312
- Page(to):
- 322
- Pages:
- 11
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819453754 [0819453757]
- Language:
- English
- Call no.:
- P63600/5452
- Type:
- Conference Proceedings
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