1.

Conference Proceedings
Conference Proceedings
1. INVITED: NATURE AND GENERATION OF GROWN-IN DEFECTS IN CZOCHRALSKI SILICON CRYSTALS
Hourai, M. ; Nishikawa, H. ; Tanaka, T. ; Umeno, S. ; Asayama, E. ; Nomachi, T. ; Kelly, G.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.453-467,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
2.

Conference Proceedings
Conference Proceedings
2. RADIAL DISTRIBUTION OF THERMALLY-INDUCED DEFECTS IN HEAVILY BORON-DOPED SILICON WAFERS
Asayama, E. ; Ono, T. ; Takeshita, M. ; Hourai, M. ; Sano, M. ; Tsuya, H.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.546-556,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(1)
3.

Conference Proceedings
Conference Proceedings
3. EFFECT OF HEAVY BORON DOPING ON OXIDE PRECIPITATE GROWTH IN CZOCHRALSKI SILICON
Ono, T. ; Asayama, E. ; Horie, H. ; Hourai, M. ; Sueoka, K. ; Tsuya, H. ; Rozgonyi, G.A.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1113-1125,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
4.

Conference Proceedings
Conference Proceedings
4. Effect of Heavy Boron Doping on Oxygen Precipitation in Czochralski Silicon Substrates of Epitaxial Wafers
Sucoka, K. ; Yonemura, M. ; Akatsuka, M. ; Katahama, H. ; Ono, T. ; Asayama, E.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.253-267,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
5.

Conference Proceedings
Conference Proceedings
5. Defects Behavior on p/p+ Epitaxial Wafers During Low Temperature Device Processing
Hourai, M. ; Asayama, E. ; Onno, T. ; Sano, M. ; Tsuya, H.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.214-225,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13