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13 results

Conference Proceedings

1. Recent advances in III-nitride materials: characterrization and device applications (Invited Paper)

Razeghi,M. ; Zhang,X. ; Kung,P. ; Saxier,A. ; Walker,D. ; Lim,K. Y. ; Kim,K. S.

Pub. info.:	Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland. pp.2-11, 1997. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3179

Conference Proceedings

2. AlGaN ultraviolet detectors

Razeghi,M. ; Rogalski,A.

Pub. info.:	Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California. pp.275-286, 1997. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2999

Conference Proceedings

3. Sb-based infrared materials and photodetectors for the near-room-temperature applications

Kim,J.D. ; Michel,E.J. ; Mohseini,H. ; Wojkowski,J. ; Lee,J.J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California. pp.55-66, 1997. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2999

Conference Proceedings

4. Growth models of GaN thin films based on crystal chemistry:hexagonal and cubic GaN on Si substrates

Ohsato,H. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California. pp.288-297, 1997. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2999

Conference Proceedings

5. Intrinsic AlxGa1-xN photodetectors for the entire compositional range

Walker,D. ; Zhang,X. ; Saxler,A. ; Kung,P. ; Xu,J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California. pp.267-274, 1997. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2999

Conference Proceedings

6. Very long wavelength GaAs/GaInP quantum well infrared photodetectors

Jelen,C. ; Slivken,S. ; Brown,G.J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices II : 12-14 February 1997, San Jose, California. pp.144-152, 1997. Bellingham, WA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2999

Conference Proceedings

7. GaN doped with sulphur

Saxier,A. ; Kung,P. ; Zhang,X. ; Walker,D. ; Soiomon,J. ; Ahoujja,M. ; Mitchel,W.C. ; Vydyanath,H.R. ; Razeghi,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1161-1166, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

8. Electroluminescence of 111-nitride double heterostructure light emitting diodes with silicon and magnesium doped InGaN

Saxler,A. ; Kim,K.S. ; Walker,D. ; Kung,P. ; Zhang,X. ; Brown,G.J. ; Mitchel,W.C. ; Razeghi,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1229-1234, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

9. GaN grown using trimethylgallium and triethylgallium

Saxler,A. ; Kung,P. ; Zhang,X. ; Walker,D. ; Solomon,J. ; Mitchel,W.C. ; Razeghi,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1081-1086, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

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Conference Proceedings

10. The long wavelength luminescence observation from the self-organised InGaAs quantwn dots grown on(100)GaAs substrate by metalorganic chemical vapor deposition

Kim,K.S. ; Erdtmann,M. ; Razeghi,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part3 pp.1643-1652, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

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