Search records | 東京工業大学附属図書館文献データベース

You can search for articles included in proceedings of international conferences and technical papers which Tokyo Tech Library holds.
Tokyo Tech members can obtain tables of contents of 17,000 foreign journals by SwetScan. Tokyo Tech Library does not cover all of them.
List of Searchable Databases

Clear Form

Search for other sites by same keyword(s).

CiNii Books

NDL Search

WebcatPlus

amazon

カーリル

WorldCat

Filter

Title:

Author:

ISBN / ISSN / Paper No:

Source Title:

Publisher:

Publication Year:

～

Clear Form

Type:

Conference Proceedings

Technical Paper

Academic Journal

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

32 results

Conference Proceedings

1. About the Nature of Recombination Current in 4H-SiC pn Structures

Strel'chuk, A.M. ; Mashichev, A.V. ; Lebedev, A.A. ; Volkova, A.N. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1343-1346, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Photoemission of 4H-SiC pin Diodes Epitaxied by the Sublimation Method

Camara, N. ; Zekentes, K. ; Bano, E. ; Thuaire, A. ; Lebedev, A.A.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.391-394, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. CM-Wave Modulator with High-Voltage 4H SiC pin Diodes

Boltovets, M.S. ; Basanets, V.V. ; Zorenko, A.V. ; Krivutsa, V.A. ; Camara, N. ; Orechovskij, V.O. ; Simonchuk, V.I. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1379-1382, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 oC Temperature Range

Boltovets, M.S. ; Basanets, V.V. ; Camara, N. ; Krivutsa, V.A. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1375-1378, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Via Hole Formation in Silicon Carbide by Laser Micromachining

Zekentes, K. ; Zergioti, I. ; Klini, A. ; Constantinidis, G.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1119-1122, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

6. Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics

Brezeanu, M. ; Badila, M. ; Brezeanu, G. ; Udrea, F. ; Boianceanu, C. ; Amaratunga, G.A.J. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1087-1090, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

7. Investigation of Microwave Switching 4HSiC PiN Diodes in the 20-500℃ Temperature Range

Boltovets, M. S. ; Basanets, V. V. ; Camara, N. ; Krivutsa, V. A. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.997-1000, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

8. Forward-Bias Degradation in 4H-SiC p+nn+ Diodes: Influence of the Mesa Etching

Camara, N. ; Thuaire, A. ; Bano, E. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.773-776, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

9. Growth and Characterization of Three-Dimensional SiC Nanostructures on Si

Cimalla, V. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.747-750, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche Regime

Banc, C. ; Bano, E. ; Ouisse, T. ; Vassilevski, K. ; Zekentes, K.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1293-1296, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

32 results

Select: Check all | Remove all

Sort order

10 | 50 | 100 / Per Page

Filtering by: