1.

Conference Proceedings
Conference Proceedings
1. CHARACTERIZATION OF PHOTOLUMINESCENCE FROM ANODICALLY ETCHED SiC/Si HETEROSTRUCTURES
Steckl, A.J. ; Su, J.N. ; Xu, J. ; Li, J.P. ; Yuan, C. ; Yih, P.H. ; Mogul, H.C.
Pub. info.: Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A..  pp.361-366,  1993.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 298
2.

Conference Proceedings
Conference Proceedings
2. Heterogeneous Micropore Structure and Vapor Adsorption on Activated Carbons
Xie, Z. ; Yuan, C. ; Ma, L. ; Guo, K.
Pub. info.: Fundamentals of adsorption : proceedings of the Fourth International Conference on Fundamentals of Adsorption, Kyoto, May 17-22, 1992.  pp.743-,  1993.  Tokyo.  Elsevier
Title of ser.: Studies in surface science and catalysis
Ser. no.: 80
3.

Conference Proceedings
Conference Proceedings
3. A Structural, Chemical and Electrical Investigation of Tungsten Ohmic Contacts to GaN
Cole, M.W. ; Eckart, D.W. ; Han, W.Y ; Pfeffer, R.L. ; Monahan, T. ; Ren, F. ; Yuan, C. ; Stall, R.A. ; Pearton, S.J. ; Li, Y. ; Lu, Y.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.187-197,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
4.

Conference Proceedings
Conference Proceedings
4. Ion Damage and Annealing of Epitaxial Gallium Nitride and Comparison with GaAs/AlGaAs Materials
Tan, H. H. ; Williams, J. S. ; Yuan, C. ; Pearton, S. J.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.807-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
5.

Conference Proceedings
Conference Proceedings
5. Ion Implantation Doping and High Temperature Annealing of GaN
Zolper, J. C. ; Crawford, M. Hagerott ; Howard, A. J. ; Pearton, S. J. ; Abernathy, C. R. ; Vartuli, C. B. ; Yuan, C. ; Stall, R. A. ; Ramer, J. ; Hersee, S. D. ; Wilson, R. G.
Pub. info.: Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A..  pp.801-,  1996.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 395
6.

Conference Proceedings
Conference Proceedings
6. SiC SOI structures by direct carbonization conversion and direct growth from silacyclobutame
Steckl, A.J. ; Yuan, C. ; Tong, Q.Y. ; Goesele, U. ; Loboda, M.J.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.117-122,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11
7.

Conference Proceedings
Conference Proceedings
7. Ion implantation processing of GaN epitaxial layers
Tan, H.H. ; Williams, J.S. ; Zou, J. ; Cockayne, D.J.H. ; Pearton, S.J. ; Yuan, C.
Pub. info.: Proceedings of the First Symposium on III-V Nitride Materials and Processes.  pp.142-148,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-11
8.

Conference Proceedings
Conference Proceedings
8. Status of Ion Implantation Doping and Isolation of III-V Nitrides
Zolper, J.C. ; Pearton, S.J. ; Abernathy, C.R. ; Vartuli, C. B. ; Yuan, C. ; Stall, R.A.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.144-151,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21
9.

Conference Proceedings
Conference Proceedings
9. High Quality P-type GaN and InGaN Epitaxial Growth on C-Sapphire Substrates in a Production Scale Multi-Wafer Rotating Disc MOCVD Reactor
Yuan, C. ; Salagaj, T. ; Gurary, A. ; Thompson, A.G. ; Kroll, W. ; Stall, R.A. ; Schurman, M. ; Hwang, C.-Y ; Li, Y. ; Mayo, W.E. ; Lu, Y. ; Krishnankutty, S. ; Kolbas, R.M. ; Pearton, S.J.
Pub. info.: Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII).  pp.10-25,  1995.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 95-21