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37 results

Conference Proceedings

1. HYDROGEN INCORPORATION AND CARRIER REDUCTION IN HYDROGENATED n-GaAs:Si AND p-GaAs:Zn CRYSTALS

Zavada, J. M. ; Wilson, R. G. ; Jenkinson, H. A.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.661-666, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

2. THE EFFECT OF HYDROGEN TREATMENT ON ELECTRICAL PROPERTIES OF A1GaAsSb

Polyakov, A. Y. ; Stam, M. ; Milnes, A. G. ; Wilson, R. G. ; Bochkarev, A. E. ; Raichoudhyry, P. ; Hillard, R. J. ; Pearton, S. J,.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.425-430, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

3. HIGH RESISTIVITY GaSb AND GaAs PRODUCED BY MBE GROWTH AT ELEVATED TEMPERATURES

Polyakov, A. Y. ; Milnes, A. G. ; Stam, M, ; Wilson, R. G. ; Fang, Z. Q. ; Raichoudhury, P. ; Hillard, R. J.

Pub. info.:	Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A.. pp.157-162, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	262

Conference Proceedings

4. As-IMPLANTED AND ANNEALING BEHAVIOR OF H AND Be IMPLANTS IN InP AND COMPARISON WITH GaAs

Zavada, J. M. ; Wilson, R. G. ; Novak, S. W.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.881-886, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

5. Hydrogen in GaN Experiments

Pearton, S. J. ; Lee, J. W. ; Wilson, R. G. ; Zavada, J. M. ; Weinstein, M. G. ; Song, C. Y. ; Stavola, M.

Pub. info.:	Hydrogen in semiconductors and metals : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.229-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	513

Conference Proceedings

6. Activation characteristics of donor and acceptor implants in GaN

Cao, X. A. ; Pearton, S. J. ; Singh, R. K. ; Wilson, R. G. ; Sekhar, J. A. ; Zolper, J. C. ; Han, J. ; Rieger, D. J. ; Shul, R. J. ; Guo, H. J. ; Pennycook, S. J. ; Zavada, J. M.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.513-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

7. Incorporation and Optical Activation of Er in Group III-N Materials Grown by Metalorganic Molecular-Beam Epitaxy

MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Donovan, S. M. ; Hommerich, U. ; Thaik, M. ; Wu, X. ; Ren, F. ; Wilson, R. G. ; Zavada, J. M.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.123-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

8. Hydrogen Passivation of Er-Doped AlN

Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Hommerich, U. ; Zavada, J. M. ; Ren, F. ; Wilson, R. G. ; Schwartz, R. N.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.169-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

Conference Proceedings

9. Etching and Hydrogen Incorporation in ScAlMgO4

Brandle, C. D. ; Ren, F. ; Wilson, R. G. ; Lee, J. W. ; Pearton, S. J. ; Zavada, J. M.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.163-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

10.

Conference Proceedings

10. High-Temperature Photoluminescence and Photo-luminescence Excitation Spectroscopy of Er-Doped Gallium Nitride

Hommerich, U. ; Thaik, Myo ; Robinson-Brown, T. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G. ; Schwartz, R. N. ; Zavada, J. M.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.685-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

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