MATERIALS AND DEVICE CHARACTERISTICS OF MBE MICROWAVE POWER FETs WITH BUFFER LAYERS GROWN AT LOW TEMPERATURE (300°C)

MATERIALS AND DEVICE CHARACTERISTICS OF MBE MICROWAVE POWER FETs WITH BUFFER LAYERS GROWN AT LOW TEMPERATURE (300°C)

Author(s):

Ballingall, J.M.

Publication title:

Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

241

Pub. Year:

1992

Page(from):

171

Page(to):

180

Pages:

10

Pub. info.:

Pittsburgh, Pa.: Materials Research Society

ISSN:

02729172

ISBN:

9781558991354 [1558991352]

Language:

English

Call no.:

M23500/241

Type:

Conference Proceedings

Details

TDL ID:	ZA00015725
Series ID:	PA00000011
Conf. info. (Name):	Symposium on low temperature (LT) gaas and related materials
Conf. info. (Number):	1991
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1991.12.04-1991.12.06

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