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16 results

Conference Proceedings

1. Voltage-Tunable And Two-Peak Electroluminscence Of Porous Silicon In Persulphase Solution

Cai, S. ; Wang, R. ; Li, J. ; Liu, Z.

Pub. info.:	Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors. pp.614-622, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-2

Conference Proceedings

2. Effect of Ultrasonic Treatment on Hydrophilic TiO2 Coated Surfaces

Sakai, N. ; Wang, R. ; Hashimoto, K. ; Fujishima, A. ; Watanabe, T.

Pub. info.:	Environmental issues in the electronics/semiconductor industries and electrochemical/photochemical methods for pollution abatement. pp.137-143, 1998. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-5

Conference Proceedings

3. Shallow Impurity States in Wurtzite and Zinc Blende Structure GaN

Wang, R. ; Ruden, P. P. ; Kolnik, J. ; Oguzman, I. ; Brennan, K. F.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.935-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

4. Eptiaxial Growth of III-Nitride Layers on Aluminum Nitride Substrates

Schowalter, L. J. ; Shusterman, Y. ; Wang, R. ; Bhat, I. ; Arunmozhi, G. ; Slack, G. A.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.76.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

5. Monte Carlo Calculation of High- and Low-Field AlxGa1-x N Electron Transport Characteristics

Albrecht, J. D. ; Wang, R. ; Ruden, P. P. ; Farahmand, M. ; Bellotti, E. ; Brennan, K. F.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.815-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

Conference Proceedings

6. Comparison of Electron and Hole Initiated Impact Ionization in Zinc Blende and Wurtzite Phase Gallium Nitride

Bellotti, E. ; Oguzman, I. H. ; Kolnik, J. ; Brennan, K. F. ; Wang, R. ; Ruden, P. P.

Pub. info.:	Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.457-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	468

Conference Proceedings

7. Theoretical Study of Electron Initiated Impact Ionization Rate in Bulk GaN Using a Wave Vector Dependent Numerical Transition Rate Formulation

Kolnik, J. ; Oguzman, I. H. ; Brennan, K. F. ; Wang, R. ; Ruden, P. P.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.733-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

Conference Proceedings

8. Theoretical Prediction of Zinc Blende Phase GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Rate Ratio

Kolnik, J. ; Oguzman, I. H. ; Brennan, K. F. ; Wang, R. ; Ruden, P. P.

Pub. info.:	III-Nitride, SiC, and Diamond Materials for Electronic Devices : symposium held April, 1996, San Francisco, California, U.S.A.. pp.45-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	423

Conference Proceedings

9. Monte Carlo Calculation of Hole Transport in Bulk Zincblende Phase of GaN Including a Pseudopotential Calculated Band Structure

Oguzman, I. H. ; Kolnik, J. ; Brennan, K. F. ; Wang, R. ; Ruden, P. P.

Pub. info.:	Gallium nitride and related materials : the First International Symposium on Gallium Nitride and Related Materials held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.. pp.479-, 1996. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	395

10.

Conference Proceedings

10. THE GROWTH AND IN-SITU DOPING OF SiGe/Si STRAINED HETEROSTRUCTURES BY RTP/VLP-CVD

Gu, S. ; Zheng, Y. ; Zhang, R. ; Wang, R. ; Han, P. ; Huang, X. ; Zhong, P. ; Hu, L. ; Zhu, S. ; Chen, J. N.

Pub. info.:	Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.57-, 1994. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	342

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