1.

Conference Proceedings
Conference Proceedings
1. Atomic-Step Observations on 6H- and 15R-SiC Polished Surfaces
Vicente, P. ; Pernot, E. ; Chaussende, D. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.729-732,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Growth of 3C-SiC on Si by Low Temperature CVD
Cloitre, T. ; Moreaud, N. ; Vicente, P. ; Sadowski, M.L. ; Aulombard, R.L.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.159-162,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
3.

Conference Proceedings
Conference Proceedings
3. Full Si Wafer Conversion into Bulk 3C-SiC
Leycuras, A. ; Tottereau, O. ; Vicente, P. ; Falkovsky, L.A. ; Girard, P. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.147-150,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Characterization of 3C-SiC/SOI Deposited with HMDS
Planes, N. ; Aboughe-Nze, P. ; Ravetz, M. ; Contreras, S. ; Vicente, P. ; Chassagne, T. ; Fraisse, B. ; Camassel, J. ; Monteil, Y. ; Rushworth, S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.599-602,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Optimization of the Carbonized Buffer Layer for the Growth of High Quality Single Crystal SiC on Si
Cloitre, T. ; Moreaud, N. ; Vicente, P. ; Sadowski, M. ; Moret, M. ; Aulombard, R.L.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
6.

Conference Proceedings
Conference Proceedings
6. Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
Barthe, M.-F. ; Desgardin, P. ; Henry, L. ; Corbel, C. ; Britton, D.T. ; Koegel, G. ; Sperr, P. ; Triftshauser, W. ; Vicente, P. ; diCioccio, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.493-496,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
7.

Conference Proceedings
Conference Proceedings
7. Full Si Wafer Conversion into Bulk 3C-SiC
Leycuras, A. ; Tottereau, O. ; Vicente, P. ; Falkovsky, L.A. ; Girard, P. ; Camassel, J.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.147-150,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
8.

Conference Proceedings
Conference Proceedings
8. Optical Characterization of SiC Materials: Bulk and Implanted Layers
Camassel, J. ; Vicente, P. ; Falkovski, L.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.335-340,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
9.

Conference Proceedings
Conference Proceedings
9. Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy
Barthe, M.-F. ; Desgardin, P. ; Henry, L. ; Corbel, C. ; Britton, D.T. ; Kogel, G. ; Sperr, P. ; Triftshauser, W. ; Vicente, P. ; diCioccio, L.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.493-496,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Growth at High Rates and Characterization of Bulk 3C-SiC Material
Ferro, G. ; Balloud, C. ; Juillaguet, S. ; Vicente, P. ; Camassel, J. ; Monteil, Y.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.115-118,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436