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13 results

Conference Proceedings

1. ROLE OF OXYGEN PRECIPITATION PROCESSES IN DEFECT FORMATION AND EVOLUTION IN OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL

Park, J.C. ; Lee, J.D. ; Venables, D. ; Krause, S. ; Roitman, P.

Pub. info.:	Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.153-158, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	279

Conference Proceedings

2. In-Sity Boron-Doped Si1-xGex Gate Technology for Submicron NMOS- and PMOS-FETs

OEztuerk, M.C. ; Batchelor, D. ; Venables, D. ; Maher, D.M.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.549-560, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

3. STRAIN RELIEF AND DEFECT FORMATION IN HIGH DOSE OXYGEN IMPLANTED SILICON

Venables, D. ; Jones, K. S. ; Namavar, F. ; Manke, J. M.

Pub. info.:	Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A.. pp.103-108, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	235

Conference Proceedings

4. Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low-Energy-High-Dose As+-Implanted Si

Krishnamoorthy, V. ; Venables, D. ; Moeller, K. ; Jones, K. S. ; Freer, B.

Pub. info.:	Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.29-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	439

Conference Proceedings

5. The Role of Vacancies and Interstitials in Transient-Enhanced Diffusion of Arsenic Implanted Into Silicon

Venables, D. ; Krishnamoorthy, V. ; Gossmann, H-J. ; Lilak, A. ; Jones, K. S. ; Jacobson, D. C.

Pub. info.:	Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.315-, 1997. Pittsburg, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	469

Conference Proceedings

6. High Quality RTCVD Sidewall Spacer Dielectrics

Miles, D. S. ; Mirabedini, M. R. ; Venables, D. ; Wortman, J. J. ; Maher, D. M.

Pub. info.:	Rapid thermal and integrated processing IV : symposium held April 17-20, 1995, San Francisco, California, U.S.A.. pp.277-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	387

Conference Proceedings

7. Process Definition for Obtaining Ultrathin Silicon Oxides Using Full-Wafer Electrical and Optical Measurements

Oberhofer, A. ; Chen, J. ; Koh, K. ; Schrader, M. ; Shah, S. ; Venables, R. ; Young, C. ; Xu, M. ; Kuehn, R. ; Maher, D. ; Venables, D.

Pub. info.:	Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.. pp.573-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	567

Conference Proceedings

8. Effect of End-of-Range Defects, Arsenic Clustering, and Precipitation on Transient-Enhanced Diffusion in As+- Implanted Si

Krishnamoorthy, V. ; Venables, D. ; Moeller, K. ; Jones, K. S. ; Jackson, J.

Pub. info.:	Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A.. pp.401-, 1997. Pittsburg, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	469

Conference Proceedings

9. A Comparison of MOS Devices with In Situ Boron Doped Polysilicon and Poly-SiGe Gates Deposited in an RTCVD System using Si2H6 and B2H6 Gas Mixture

Mirabedini, M. R. ; Li, V. Z-Q. ; Acker, A. R. ; Kuehn, R. T. ; Venables, D. ; Ozturk, M. C. ; Wortman, J. J.

Pub. info.:	Rapid thermal and integrated processing VII : symposium held April 13-15, 1998, San Francisco, California, U.S.A.. pp.207-, 1998. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	525

10.

Conference Proceedings

10. Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low-Energy High-Dose As+ Implanted Si

Krishnamoorthy, V. ; Venables, D. ; Moeller, K. ; Jones, K. S. ; Freer, B.

Pub. info.:	Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.21-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	438

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