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45 results

Conference Proceedings

1. FORMATION OF WELL-SEPARATED BURIED AND SURFACE NICKEL-SILICIDE LAYERS IN A SINGLE ION IMPLANTATION STEP

Wu, M.F. ; De Wachter, J. ; Hendrickx, P. ; Pattyn, H. ; Van Bavel, A.M. ; Langouche, G. ; Vanhellemont, J. ; Bender, H. ; Maenhoudt, M. ; Bruynseraede, Y.

Pub. info.:	Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.899-904, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	279

Conference Proceedings

2. SUBSTRATE AND PARTICLE DEPENDENT DEEP LEVEL GENERATION IN SILICON BY MeV PARTICLE BEAMS

Trauwaert, M.-A. ; Vanhellemont, J. ; Simoen, E. ; Claeys, C. ; Johlander, B. ; Harboe-Sorensen, R. ; Adams, L. ; Clauws, P.

Pub. info.:	Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.93-98, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	279

Conference Proceedings

3. InAsSb PHOTODIODES GROWN ON InAs, GaAs AND Si SUBSTRATES BY MOLECULAR BEAM EPITAXY

Dobbelaere, W. ; De Boeck, J. ; De Raedt, W. ; Vanhellemont, J. ; Zou, G. ; Van Hove, M. ; Brijs, B. ; Mertens, R. ; Borghs, G.

Pub. info.:	Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.181-186, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	216

Conference Proceedings

4. STUDY OF THE INFLUENCE OF STRUCTURAL PROPERTIES ON Si AND Be DOPING OF HETEROEPITAXIAL InAsSb ON GaAs-COATED Si SUBSTRATES FOR INFRARED PHOTODIODES

Boeck, De J. ; Dobbelaere, W. ; Van Hove, M. ; Vanhellemont, J. ; De Raedt, W. ; Vandervorst, W. ; Mertens, R. ; Borghs, G.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.147-152, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

5. OPTIMIZATION OF Si-WAFER CLEANING AND THE USE OF BUFFER-LAYERS FOR EPITAXIAL GROWTH OF SiGe-LAYERS BY VLPCVD AT T = 650 C

Caymax, Matty R. ; Poortmans, J. ; Van Ammel, A. ; Vandervorst, W. ; Vanhellemont, J. ; Nijs, J.

Pub. info.:	Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A.. pp.461-466, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	259

Conference Proceedings

6. EVALUATION OF Si SURFACE CONDITIONS BY THE USE OF A SURFACE PHOTOVOLTAGE TECHNIQUE

Trauwaert, M.-A. ; Kenis, K. ; Caymax, M. ; Mertens, P.W. ; Heyns, M.M. ; Vanhellemont, J. ; Graf, D. ; Wagner, P.

Pub. info.:	Proceedings of the Fifth International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. pp.455-462, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-35

Conference Proceedings

7. CURRICULUM VITAE OF OXIDE PRECIPITATES: FROM NUCLEATION DURING CRYSTAL GROWTH TO THEIR FINAL DESTINATION IN PROCESSED WAFERS

Kissinger, G. ; Vanhellemont, J. ; Lambert, U. ; Dornberger, E. ; Sorge, R. ; Morgenstern, G. ; Grabolla, T. ; Graef, D. ; von Ammon, W. ; Wagner, P. ; Richter, H.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.1095-1112, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(2)

Conference Proceedings

8. ON THE ELECTRICAL ACTIVITY OF OXYGEN-RELATED EXTENDED DEFECTS IN SILICON

Vanhellemont, J. ; Simoen, E. ; Bosman, G. ; Claeys, C. ; Kaniava, A. ; Gaubas, E. ; Blondeel, A. ; Clauws, P.

Pub. info.:	Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology. pp.670-683, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-10

Conference Proceedings

9. SIMULATION OF NON-UNIFORM GROWN-IN VOID DISTRIBUTIONS IN CZOCHRALSKI IN SILICON CRYSTAL

Dornberger, E. ; Esfandyari, J. ; Vanhellemont, J. ; Graef, D. ; Lambert, U. ; Dupret, F. ; von Ammon, W.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.490-502, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(1)

10.

Conference Proceedings

10. Oxygen Precipitation and Stacking Fault Formation in Wafers with a Transition from Vacancy-Rich to Interstitial-Rich

Kissinger, G. ; Morgenstern, G. ; Grabolla, T. ; Richter, H. ; Vanhellemont, J. ; Lambert, U. ; Graef, D.

Pub. info.:	Proceedings of the Fifth International Symposium on High Purity Silicon V. pp.158-169, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-13

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