1.

Conference Proceedings
Conference Proceedings
1. *AN INTERFACIAL PHASE TRANSFORMATION IN CoSi2/Si (111)
Eaglesham, D.J. ; Tung, R.T. ; Headrick, R.L. ; Robinson, I.K. ; Schrey, F.
Pub. info.: Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A..  pp.141-146,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 159
2.

Conference Proceedings
Conference Proceedings
2. SILICIDE AS DOPANT SOURCE: ULTRASHALLOW N AND P JUNCTIONS IN SILICON
Herner, S.B. ; Gossmann, H.-J. ; Tung, R.T. ; Gila, B.P.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1224-1231,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
3.

Conference Proceedings
Conference Proceedings
3. The Effect of TiSi2 Film Thickness and Growth on the Point Defect Perturbance in Si
Hemer, S.B. ; Jones, K.S. ; Gossman, H.-J. ; Tung, R.T. ; Poate, J.M. ; Luftman, H.S.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.337-347,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
4.

Conference Proceedings
Conference Proceedings
4. GROWTH AND EPITAXIAL CoSi2 AND NiSi2 ON (111), (100) AND (110) Si AT ROOM TEMPERATURE
Tung, R.T. ; Schrey, F.
Pub. info.: Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.243-248,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 160
5.

Conference Proceedings
Conference Proceedings
5. TOPOGRAPHY OF Si (111): CLEAN SURFACE PREPARATION AND SILICON MOLECULAR BEAM EPITAXY
Tung, R.T. ; Schrey, F. ; Eaglesham, D.J.
Pub. info.: Atomic scale structure of interfaces : symposium held November 27-29, 1989, Boston Massachusetts, U.S.A..  pp.321-326,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 159
6.

Conference Proceedings
Conference Proceedings
6. THE FABRICATION OF NiSi2/Si(100) INTERFACES WITH CONTROLLED MORPHOLOGIES
Sullivan, J.P. ; Tung, R.T. ; Schrey, F. ; Graham, W.R.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.623-628,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281
7.

Conference Proceedings
Conference Proceedings
7. GROWTH OF SINGLE CRYSTAL Si/NiSi2/Si(100) AND SiCoSi2/Si(100) STRUCTURES BY MOLECULAR BEAM EPITAXY AND FURNACE ANNEALING
Tung, R.T. ; Eaglesham, D.J. ; Schrey, F. ; Sullivan, J.P.
Pub. info.: Semiconductor heterostructures for photonic and electronic applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.641-646,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 281