1.

Conference Proceedings
Conference Proceedings
1. CVD Growth and Characterization of 4H-SiC Epitaxial Film on (1120) As-Cut Substrates
Zhang, Z. ; Gao, Y. ; Arjunan, A. C. ; Toupitsyn, E. Y. ; Sadagopan, P. ; Kennedy, R. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.113-116,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
2.

Conference Proceedings
Conference Proceedings
2. Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B
Maximenko, S. ; Soloviev, S. ; Grekov, A. ; Bolotnikov, A. ; Gao, Y. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.989-992,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
3.

Conference Proceedings
Conference Proceedings
3. Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes
Khlebnikov, I. I. ; Cherednichenko, D. I. ; Khlebnikov, Y. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.59-62,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
4.

Conference Proceedings
Conference Proceedings
4. An Analytical Study of the SiC Growth Process from Vapor Phase
Cherednichenko, D. I. ; Khlebnikov, Y. I. ; Khlebnikov, I. I. ; Soloviev, S. I. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.35-38,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
5.

Conference Proceedings
Conference Proceedings
5. Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers
Chandler, T. C. Jr. ; Lari, M. B. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.845-848,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
6.

Conference Proceedings
Conference Proceedings
6. Selective Doping of 6H-SiC by Diffusion of Boron
Soloviev, S. I. ; Gao, Y. ; Khlebnikov, I. I. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.945-948,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
7.

Conference Proceedings
Conference Proceedings
7. Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination
Zhang, Q. ; Madangarli, V. ; Tarplee, M. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1223-1226,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. Computer Simulation of p-Type SiC Schottky Diode using ATLAS
Tarplee, M. ; Madangarli, V. ; Zhang, Q. ; Palmer, P. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1231-1234,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
9.

Conference Proceedings
Conference Proceedings
9. Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a-plane SiC Substrates
Li, Jiawei ; Gong, Zheng ; Chen, Changqing ; Adivarahan, Vinod ; Gaevski, Mikhail ; Kuokstis, Edmundas ; Shatalov, Maxim ; Gao, Ying ; Zhang, Zehong ; Arjunan, Arul ; Sudarshan, T. S. ; Maruska, H.Paul ; Yang, Jinwei ; Khan, M. Asif
Pub. info.: GaN, AIN, InN and their alloys : symposium held November 29-December 3, 2004, Boston, Massachusetts, U.S.A..  pp.87-94,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 831
10.

Conference Proceedings
Conference Proceedings
10. Characterization of Silicon Carbide using Raman Spectroscopy
Burton, J. C. ; Long, F. H. ; Khlebnikov, Y. ; Khlebnikov, I. ; Parker, M. ; Sudarshan, T. S.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.615-618,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)