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17 results

Conference Proceedings

1. ALKOXIDE DOPING OF GaAs DURING ORGANOMETALLIC VAPOR PHASE EPITAXY

Park, Y. ; Skowronski, M. ; Rosseel, T.M.

Pub. info.:	Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A.. pp.75-80, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	282

Conference Proceedings

2. Atomic Structure of Deep Level Defects in Dimethylaluminum Methoxide-Doped GaAs

Park, Y. ; Skowronski, M.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.159-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

Conference Proceedings

3. High-Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE

Goorsky, M. S. ; Polyakov, A. Y. ; Skowronski, M. ; Shin, M. ; Greve, D. W.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.489-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

4. OXYGEN DOPING OF GaAs DURING OMVPE CONTROLLED INTRODUCTION OF IMPURITY COMPLEXES

Park, Y. ; Skowronski, M. ; Rosseel, T. S. ; Manasreh, M. O.

Pub. info.:	Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A.. pp.293-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	325

Conference Proceedings

5. INFLUENCE OF GROWTH TEMPERATURE ON ORDERING IN InGaAs GROWN ON (001) InP USING TERTIARYBUTYLARSINE SOURCE MOCVD

McFadden, R. S. ; Skowronski, M. ; Mahajan, S.

Pub. info.:	Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A.. pp.287-, 1994. Pittsburgh. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	326

Conference Proceedings

6. Dynamics of Surface Segregation During InGaAs MBE

Evans, Keith R. ; Kaspi, R. ; Ehret, J. E. ; Skowronski, M.

Pub. info.:	Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.. pp.505-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	379

Conference Proceedings

7. Growth of AlBN Solid Solution by OMVPE

Shin, M. ; Polyakov, A. Y. ; Qian, W. ; Skowronski, M. ; Greve, D. W. ; Wilson, R. G.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.141-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

8. Studies of Electrically and Recombination Active Centers in Undoped GaN Grown by OMVPE

Polyakov, A. Y. ; Govorkov, A. V. ; Smirnov, N. B. ; Shin, M. ; Skowronski, M. ; Greve, D. W.

Pub. info.:	III-V nitrides : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.. pp.591-, 1997. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	449

Conference Proceedings

9. Scanning-Tunneling-Microscopy Observation of Surface Reconstruction of GaN on Sapphire and 6H-SiC

Smith, A. R. ; Ramachandran, V. ; Feenstra, R. M. ; Greve, D. W. ; Neugebauer, J. ; Northrup, J. E. ; Shin, M. ; Skowronski, M.

Pub. info.:	Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.. pp.363-, 1998. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	482

10.

Conference Proceedings

10. The Structural Evolution of Lely Seeds During the Initial Stages of SiC Sublimation Growth

Heydemann, V. D. ; Sanchez, E. K. ; Rohrer, G. S. ; Skowronski, M.

Pub. info.:	Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.295-, 1998. Warrendale, Penn.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	483

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