1.

Conference Proceedings
Conference Proceedings
1. ON THE ORIGIN OF EL2 INTRACENTER ABSORPTION BAND IN GaAs
Skowronski, M.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.405-410,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
2.

Conference Proceedings
Conference Proceedings
2. HIGH RESOLUTION OPTICAL STUDY OF THE ANTISITE DEFECT AsGa IN GaAs, CORRELATION WITH MIDGAP LEVEL EL2
Skowronski, M. ; Lin, D. G. ; Lagowski, J. ; Pawlowicz, L..M. ; Ko, K. Y. ; Gatos, H. C.
Pub. info.: Microscopic identification of electronic defects in semiconductors : symposium held April 15-18, 1985, San Francisco, California, U.S.A..  pp.207-212,  1985.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 46