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61 results

Conference Proceedings

1. Impact of the back-gate bias on the low-frequency noise of partially depleted silicon-on-insulator MOSFETs

Lukyanchikova, N. R. ; Garbar, N. ; Smolanka, A. ; Simoen, E. ; Mercha, A. ; Claeys, C.

Pub. info.:	Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain. pp.208-214, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5470

Conference Proceedings

2. 1/f noise in deep-submicron CMOS technology for RF and analog applications (Invited Paper)

Mercha, A. ; Simoen, E. ; Decoutere, S. ; Claeys, C.

Pub. info.:	Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain. pp.193-207, 2004. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	5470

Conference Proceedings

3. THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON

Simoen, E. ; Claeys, C. ; Job, R. ; Ulyashin, A.G. ; Fahrner, W.R. ; Tonelli, G. ; Degryse, O. ; Clauws, P.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.912-924, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

4. Analysis of HALO implant influence on the self-heating and self-heating enhanced impact ionization on 0.13 μm floating-body partially-depleted SOI MOSFET at low temperature

Pavanello, M.A. ; Martino, J.A. ; Simoen, E. ; Mercha, A. ; Clacys, C. ; van Meer, H. ; De Meyer, K.

Pub. info.:	Silicon-on-insulator technology and devices XI : proceedings of the international symposium. pp.389-394, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-5

Conference Proceedings

5. THE BEHAVIOUR OF OXYGEN IN OXYGENATED N-TYPE HIGH-RESISTIVITY FLOAT-ZONE SILICON

Simoen, E. ; Claeys, C. ; Job, R. ; Ulyashin, A.G. ; Fahrner, W.R. ; Tonelli, G. ; Degryse, O. ; Clauws, P.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.912-926, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

6. Evidence for a 'linear kink effect' in ultra-thin gate oxide SOI MOSFETs

Mercha, A. ; Simoen, E. ; Rafi, J.-M. ; Clacys, C. ; Lukyanchikova, N. ; Petrichuk, M. ; Garbar, N.

Pub. info.:	Silicon-on-insulator technology and devices XI : proceedings of the international symposium. pp.319-324, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-5

Conference Proceedings

7. Lifetime and Leakage Current Studies in Shallow P-N Junctions

Poyai, A. ; Simoen, E. ; Claeys, C. ; Rooyackers, R. ; Badenes, G. ; Gaubas, E.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.403-413, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

Conference Proceedings

8. What Can Low-frequency Noise Learn us About the Quality of Thin-gate Dielectrics?

Simoen, E. ; Mercha, A. ; Claeys, C.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.153-172, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-2

Conference Proceedings

9. Analysis of Junctions Formed in Strained Si/SiGe Substrates

Eneman, G. ; Simoen, E. ; Lauwers, A. ; Lindsay, R. ; Verheyen, P. ; Delhougne, R. ; Loo, R. ; Caymax, M. ; Meunier-Beillard, P. ; Demuynck, S. ; Meyer, K.De ; Vandervorst, W.

Pub. info.:	High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A.. pp.187-192, 2004. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	809

10.

Conference Proceedings

10. The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs

Camillo, L.M. ; Martino, J.A. ; Simoen, E. ; Claeys, C.

Pub. info.:	Silicon-on-insulator technology and devices XII : proceedings of the international symposium. pp.119-124, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-03

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