1.

Conference Proceedings
Conference Proceedings
1. A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient
Rao, S. ; Saddow, S.E. ; Bergamini, F. ; Nipoti, R. ; Emirov, Y. ; Agrawal, Anant
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.229-234,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
2.

Conference Proceedings
Conference Proceedings
2. Structural Characterization of 3C-SiC Films Grown on Si Layers Wafer Bonded to Polycrystalline SiC Substrates
Myers, R.L. ; Hobart, K.D. ; Twigg, M. ; Rao, S. ; Fatemi, M. ; Kub, F.J. ; Saddow, S.E.
Pub. info.: Silicon carbide 2004--materials, processing and devices : symposium held April 14-15, 2004, San Francisco, California, U.S.A..  pp.145-148,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 815
3.

Conference Proceedings
Conference Proceedings
3. Spin-On Doping of Porous SiC with Er
Koshka, Y. ; Song, Y. ; Walker, J. ; Saddow, S.E. ; Mynbaeva, M.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.763-766,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
4.

Conference Proceedings
Conference Proceedings
4. Hydrogen Gas Sensors using 3C-SiC/Si Epitaxial Layers
Fawcett, T.J. ; Wolan, J.T. ; Myers, R.L. ; Walker, J. ; Saddow, S.E.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1499-1502,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
5.

Conference Proceedings
Conference Proceedings
5. Development of 3C-SiC SOI Structures using Si on Polycrystalline SiC Wafer Bonded Substrates
Myers, R.L. ; Saddow, S.E. ; Rao, S. ; Hobart, K.D. ; Fatemi, M. ; Kub, F.J.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1511-1514,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460
6.

Conference Proceedings
Conference Proceedings
6. Thermal Oxidation of 4H-Silicon Using the Afterglow Method
Hoff, A.M. ; Oborina, E. ; Saddow, S.E. ; Savtchouk, A.
Pub. info.: Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003.  pp.1349-1352,  2004.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 457-460