1.

Conference Proceedings
Conference Proceedings
1. Design and Characterization of 2.5kV 4H-SiC JBS Rectifiers with Self-Aligned Guard Ring Termination
Sheridan, D.C. ; Merrett, J. N. ; Cressler, J.D. ; Saddow, S.E. ; Williams, J.R. ; Ellis, C. ; Niu, G.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.687-690,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
2.

Conference Proceedings
Conference Proceedings
2. Structural Characterization of SiC Epitaxial Layers Grown on Porous SiC Substrates
Saddow, S.E. ; Melnychuk, G. ; Mynbaeva, M. ; Nikitina, I. ; Vetter, W.M. ; Jin, L. ; Dudley, M. ; Shamsuzzoha, M. ; Dmitriev, V. ; Wood, C.E.C
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
3.

Conference Proceedings
Conference Proceedings
3. Characterization Of Thin GaN Layers Deposited By Hydride Vapor Phase Epitaxy (HVPE) On 6H-SiC Substrates
Wolan, John T. ; Koshka, Yaroslav ; Saddow, S.E. ; Melnik, Yu V. ; Dmitriev, V.
Pub. info.: Wide-bandgap electronic devices.  pp.T5.7-,  2001.  Warrendale, PA..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 622
4.

Conference Proceedings
Conference Proceedings
4. Comparison of 3C-SiC Films Grown By CVD on Si(111) and Si(211) Substrates
Wolan, J.T. ; Grayson, B.A. ; Graves, M. ; Bledsoe, M. ; Kirchner, K. ; Saddow, S.E.
Pub. info.: Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 640
5.

Conference Proceedings
Conference Proceedings
5. SiC Defect Density Reduction by Epitaxy on Porous Surfaces
Saddow, S.E. ; Mynbaeva, M. ; Choyke, W.J. ; Devaty, R.P. ; Bai, S. ; Melnychuck, G. ; Koshka, Y. ; Dmitriev, V. ; Wood, C.E.C.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.115-118,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356