1.

Conference Proceedings

Conference Proceedings
M. Niwa ; R. Mitsuhashi ; S. Hayashi ; K. Yamamoto ; Y. Harada ; M. Kubota ; A. Rothchild ; T. Hoffmann ; S. Kubicek ; S. DeGendt ; M. Heyns ; A. Lauwers ; S. Biesemans ; J. Kittle
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.269-286,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
2.

Conference Proceedings

Conference Proceedings
R. Singanamalla ; H. Yu ; T. Janssens ; T. Witters ; T. Schram ; S. Kubicek ; S. DeGendt ; M. Jurczak ; K. De Meyer
Pub. info.: Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing.  pp.49-62,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(1)
3.

Conference Proceedings

Conference Proceedings
J. A. Kitti ; A. Lauwers ; M. van Dal ; H. Yu ; A. Veloso ; T. Hoffinann ; M. Pawlak ; C. Demeurisse ; S. Kubicek ; M. Niwa ; C. Vrancken ; P. Absil ; S. Bieseinans
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.233-246,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)
4.

Conference Proceedings

Conference Proceedings
S. Mertens ; Y. Cho ; F. Nouri ; R. Schreutelkamp ; Y. Kim ; P. Verheyen ; J. Steenbergen ; C. Vrancken ; H. Bender ; O. Richard ; B. Van Daele ; W. Vandervorst ; P. Absil ; S. Kubicek ; C. Demeurisse ; Z. Tokei ; A. Lauwers ; L. Geenen
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.139-148,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)