1.

Conference Proceedings
Conference Proceedings
1. Thermally Induced Dislocation and Slip Defects in Silicon
Cho, C.R. ; Kim, Y.S. ; Lee, J.K. ; Ko, S.W. ; Choi, D.J. ; Son, C.B. ; Stephens, A.E. ; Rozgonyi, G.A.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.350-358,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-2
2.

Conference Proceedings
Conference Proceedings
2. FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY
Karoui, A. ; Karoui, F.S. ; Rozgonyi, G.A. ; Hourai, M. ; Sueoka, K.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.670-681,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
3.

Conference Proceedings
Conference Proceedings
3. Formation and Annihilation of Epitaxial Stacking Faults Generated from Pre-Existing Nucleation Sites in Silicon
Cho, C.R. ; Noh, K.Y. ; Lee, D.H. ; Kim, Y.S. ; Ko, S.W. ; Kim, C.W. ; Kim, D.H. ; Son, C.B. ; Kim, S.J. ; Cho, D.H. ; Choi, J.J. ; Kim, D.J. ; Bae, K.M. ; Rozgonyi, G.A.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.201-208,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17
4.

Conference Proceedings
Conference Proceedings
4. INVITED: CONTROL OF POINT DEFECTS, IMPURITIES, AND EXTENDED DEFECTS IN CZ Si: THE ORIGINAL/ONGOING SILICON NANOSCALE ENGINEERING DEFECT SCIENCE
Rozgonyi, G.A.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.149-162,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
5.

Conference Proceedings
Conference Proceedings
5. Vibrational Spectra of Nitrogen-Oxygen Defects in Nitrogen Doped Silicon Using Density Functional Theory
Karoui, F.Sahtout ; Karoui, A. ; Inoue, N. ; Rozgonyi, G.A.
Pub. info.: Silicon front-end junction formation : physics and technology : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.381-386,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 810
6.

Conference Proceedings
Conference Proceedings
6. INVITED: CONTROL OF POINT DEFECTS, IMPURITIES, AND EXTENDED DEFECTS IN CZ Si: THE ORIGINAL/ONGOING SILICON NANOSCALE ENGINEERING DEFECT SCIENCE
Rozgonyi, G.A.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.149-162,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
7.

Conference Proceedings
Conference Proceedings
7. FIRST PRINCIPLE CALCULATIONS FOR NITROGEN- VACANCY RELATED DEFECTS IN NITROGEN DOPED SILICON; STRUCTURE, ENERGETICS AND THERMAL STABILITY
Karoui, A. ; Karoui, F.S. ; Rozgonyi, G.A. ; Hourai, M. ; Sueoka, K.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.670-681,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
8.

Conference Proceedings
Conference Proceedings
8. Theoretical Analysis of Nitrogen Complexes in Cz Silicon
Funao, D. ; Ohkubo, I. ; Inoue, N. ; Karoui, A. ; Rozgonyi, G.A.
Pub. info.: High purity silicon VII : proceedings of the international symposium.  pp.133-140,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-20