1.

Conference Proceedings
Conference Proceedings
1. Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation
Rutsch, G. ; Devaty, R. P. ; Choyke, W. J. ; Langer, D. W. ; Rowland, L. B. ; Niemann, E. ; Wischmeyer, F.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.733-736,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
2.

Conference Proceedings
Conference Proceedings
2. Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy
Rowland, L. B. ; Dunne, G. T. ; Freitas, J. A. Jr.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.161-164,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(1)
3.

Conference Proceedings
Conference Proceedings
3. Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
Cao, X. A. ; LeBoeuf, S. F. ; Garrett, J. L. ; Ebong, A. ; Rowland, L. B. ; Arthur, S. D.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.349-354,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764