1.

Conference Proceedings
Conference Proceedings
1. Extremely High-Density Capacitors with ALD High-k Dielectric Layers
Klootwijk, J. ; Kemmeren, A. ; Wolters, R. ; Roozeboom, F. ; Verhoeven, J. ; Van Den Heuvel, E.
Pub. info.: Defects in high-κ gate dielectric stacks : nano-electronic semiconductor devices.  pp.17-29,  2006.  Dordrecht.  Springer
Title of ser.: NATO science series. Series 2, Mathematics, physics and chemistry
Ser. no.: 220
2.

Conference Proceedings
Conference Proceedings
2. Laser Annealing for Ultra-Shallow Junction Formation in Advanced CMOS
Surdeanu, R. ; Ponomarev, Y.V. ; Cerutti, R. ; Pawlak, B.J. ; Nanver, L.K. ; Hoflijk, I. ; Stolk, P.A. ; Dachs, C.J.J. ; Verheijen, M.A. ; Kaiser, M. ; Hopstaken, M.J.P. ; van Berkum, J.G.M. ; Roozeboom, F. ; Lindsay, R.
Pub. info.: Rapid thermal and other short-time processing technologies III : proceedings of the international symposium.  pp.413-428,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-11
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Conference Proceedings
Conference Proceedings
3. High-Density, Low-Loss MOS Capacitors for Integrated RF Decoupling
Roozeboom, F. ; Elfrink, R.J.G. ; Rijks, G.S.M., Th ; Verhoeven, J.F.C.M. ; Kemmeren, A. ; van den Meerakker, J.E.A.M.
Pub. info.: Proceedings : International Symposium on Advanced Packaging Materials : processes, properties and interfaces, Chateau Elan, Braselton, Georgia, March 11-14, 2001.  pp.477-483,  2001.  Washington, DC.  IMAPS
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 4587
4.

Conference Proceedings
Conference Proceedings
4. 26 Tantalum-based Gate Electrode Metals for Advanced CMOS Devices
Hooker, J. C. ; Lander, R.J.P. ; Cubaynes, F. N. ; Schram, T. ; Roozeboom, F. ; van Zijl, J. ; Moos, M. ; van den Heuvel, F.C. ; Naburgh, E. ; van Berkum, J. G. M. ; Tamminga, Y. ; Dao, T. ; Henson, K. ; Schaekers, M. ; van Ammel, A. ; Tokei, Z. ; Demand, M. ; Dachs, C. (Invited Paper)
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.215-224,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
5.

Conference Proceedings
Conference Proceedings
5. Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion
Cowern, N.E.B. ; Mannino, G. ; Roozeboom, F. ; van Berkum, J.G.M ; Colombeau, B. ; Claverie, A.
Pub. info.: Rapid thermal and other short-time processing technologies : proceedings of the international symposium.  pp.61-72,  2000.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-9
6.

Conference Proceedings
Conference Proceedings
6. INTEGRATION ISSUES OF POLYSILICON WITH HIGH K DIELECTRICS DEPOSITED BY ATOMIC LAYER CHEMICAL VAPOR DEPOSITION
Tsai, W. ; Chen, I. ; Carter, R. ; Cartier, E. ; Kluth, J. ; Richard, O. ; Claes, M. ; Lin, Y.M. ; Nohira, H. ; Conard, T. ; Caymax, M. ; Young, E. ; Vandervorst, W. ; DeGendt, S. ; Heyns, M. ; Manabe, Y. ; Maes, J.W. ; Rittersma, Z.M. ; Besling, W. ; Roozeboom, F.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.747-760,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
7.

Conference Proceedings
Conference Proceedings
7. Concept of Electrically Switchable Reflector Films on the Camber Walls of RTP Reactors
Roozeboom, F. ; van der Sluis, P. ; Cowern, N.E.B.
Pub. info.: Rapid thermal and other short-time processing technologies II : proceedings of the international symposium.  pp.41-48,  2001.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-9
8.

Conference Proceedings
Conference Proceedings
8. Experimental study on the mechanism of carbon diffusion in silicon
Cowern, N.E.B. ; Colombeau, B. ; Roozeboom, F. ; Hopstaken, M. ; Snijders, H. ; Meunier-Beillard, P. ; Lerch, W.
Pub. info.: Silicon front-end junction formation technologies : symposium held April 2-4, 2002, San Francisco, California, U.S.A..  pp.255-262,  2002.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 717
9.

Conference Proceedings
Conference Proceedings
9. High-Density, Low-Loss MOS Decoupling Capacitors Integrated in a GSM Power Amplifier
Roozeboom, F. ; Kemmeren, A. ; Verhoeven, J. ; van den Heuvel, E. ; Kretschman, H. ; Fric, T.
Pub. info.: Materials, integration and packaging issues for high-frequency devices.  pp.157-164,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 783
10.

Conference Proceedings
Conference Proceedings
10. The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer
Pawlak, B.J. ; Vandervorst, W. ; Lindsay, R. ; Wolf, I.De ; Roozeboom, F. ; Delhougne, R. ; Benedetti, A. ; Loo, R. ; Caymax, M. ; Maex, K. ; Cowern, N.E.B.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.281-286,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809