1.

Conference Proceedings
Conference Proceedings
1. ROLE OF OXYGEN PRECIPITATION PROCESSES IN DEFECT FORMATION AND EVOLUTION IN OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
Park, J.C. ; Lee, J.D. ; Venables, D. ; Krause, S. ; Roitman, P.
Pub. info.: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.153-158,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 279
2.

Conference Proceedings
Conference Proceedings
2. HIGH RESOLUTION ELECTRON MICROSCOPY OF DEFECTS IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
Visitserngtrakul, S. ; Jung, C. O. ; Cordts, B. F. ; Roitman, P. ; Krause, S. J.
Pub. info.: High resolution electron microscopy of defects in materials : symposium held April 16-18, 1990, San Francisco, California, USA.  pp.135-140,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 183
3.

Conference Proceedings
Conference Proceedings
3. EFFECT OF INTERMEDIATE THERMAL PROCESSING ON MICROSTRUCTURAL CHANGES OF OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
Lee, J. D. ; Park, J. C. ; Krause, S. J. ; Roitman, P. ; El-Ghor, M. K.
Pub. info.: Phase formation and modification by beam-solid interactions : symposium held December 2-6, 1991, Boston, Massachusetts, U.S.A..  pp.133-138,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 235
4.

Conference Proceedings
Conference Proceedings
4. OXYGEN BUBBLE FORMATION AND TRANSFORMATION DURING HIGH-DOSE OXYGEN IMPLANTATION AND ANNEALING OF SILICON
Krause, S.J. ; Seraphin, S. ; Chen, B.L. ; Cordts, B. ; Roitman, P.
Pub. info.: Surface chemistry and beam-solid interactions : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A..  pp.229-234,  1991.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 201
5.

Conference Proceedings
Conference Proceedings
5. DEFECT PAIR FORMATION BY IMPLANTATION-INDUCED STRESSES IN HIGH-DOSE OXYGEN IMPLANTED SILICON-ON-INSULATOR MATERIAL
Lee, J. D. ; Park, J. C. ; Venables, D. ; Krause, S. J. ; Roitman, P.
Pub. info.: Materials synthesis and processing using ion beams : symposium held November 29-December 3, 1993, Boston, Massachusetts, U.S.A..  pp.753-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 316
6.

Conference Proceedings
Conference Proceedings
6. Effect of implantation conditions on defect microstructure in annealed SIMOX
Lee, J.D. ; Park, J.C. ; Krause, S.J. ; Venables, D. ; Roitman, P.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.82-91,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11
7.

Conference Proceedings
Conference Proceedings
7. Effect of nitrogen ambients during high temperature SIMOX annealing
Roitman, P. ; Mayo, S. ; Simons, D. ; Krause, S.J. ; Venables, D. ; Park, J.C. ; Lee, J.D. ; Lenahan, P. ; Conley, J.
Pub. info.: Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices.  pp.92-97,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-11