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42 results

Conference Proceedings

1. Electrical transport properties of highly doped N-type GaN epilayers

Lee,H.J. ; Cheong,M.G. ; Suh,E.-K. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.321-326, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

Conference Proceedings

2. Recent advances in III-nitride materials: characterrization and device applications (Invited Paper)

Razeghi,M. ; Zhang,X. ; Kung,P. ; Saxier,A. ; Walker,D. ; Lim,K. Y. ; Kim,K. S.

Pub. info.:	Solid state crystals in optoelectronics and semiconductor technology : 7-11 October 1996, Zakopane, Poland. pp.2-11, 1997. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3179

Conference Proceedings

3. New Developments in III-Nitride Material and Device Applications

Razeghi,M. ; Saxler,A. ; Kung,P. ; Walker,D. ; Zhang,X. ; Kim,K.S. ; Vydyanath,H.R. ; Solomon,J. ; Ahoujja,M. ; Mitchel,W.C.

Pub. info.:	Physics of - Semiconductor Devices -. Part 1 pp.277-284, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

4. Reliable high-power uncoated Al-free lnGaAsP/GaAs lasers for cost-sensitive optical communication and processing applications

Razeghi,M.

Pub. info.:	Design and manufacturing of WDM devices : 4-5 November 1997, Dallas, Texas. pp.125-133, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3234

Conference Proceedings

5. Narrow-gap semiconductor photodiodes (Invited Paper)

Rogalski,A. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.2-13, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

Conference Proceedings

6. Growth and characterization of InAs/GaSb type-Il superlattices for long-wavelength infrared detectors

Mohseni,H. ; Michel,E.J. ; Razeghi,M. ; Mitchel W.C. ; Brown,G.J.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.30-38, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

Conference Proceedings

7. Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications

Kim,J.D. ; Mohseni,H. ; Wojkowski,J.S. ; Lee,J.J. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California. pp.338-348, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3629

Conference Proceedings

8. Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD

Kim,S. ; Erdtmann,M. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California. pp.371-380, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3629

Conference Proceedings

9. GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio

Kung,P. ; Zhang,X. ; Walker,D. ; Saxler,A. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices III : 28-30 January 1998, San Jose, California. pp.214-220, 1998. Bellingham, Wash., USA. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3287

10.

Conference Proceedings

10. Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-ｦﾌm wavelength range

Wojkowski,J.S. ; Mohseni,H. ; Kim,J.D. ; Razeghi,M.

Pub. info.:	Photodetectors : materials and devices IV : 27-29 January 1999, San Jose, California. pp.357-363, 1999. Bellingham, Wash., USA. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3629

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