Microwave noise in III-V- and SiGe-based HBTs: comparison, trends, and numbers (Invited Paper)
- Author(s):
- Sakalas, P. ( Technische Univ. Dresden (Germany) and Semiconductor Physics Institute (Lithuania) )
- Schroter, M. ( Technische Univ. Dresden (Germany); P. Zampardi, Skyworks Inc. (USA) )
- Racanelli, M. ( Jazz Semiconductor (USA) )
- Publication title:
- Noise in devices and circuits II : 26-28 May 2004, Maspalomas, Gran Canaria, Spain
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5470
- Pub. Year:
- 2004
- Page(from):
- 151
- Page(to):
- 163
- Pages:
- 13
- Pub. info.:
- Bellingham, Wash.: SPIE - The International Society of Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819453969 [081945396X]
- Language:
- English
- Call no.:
- P63600/5470
- Type:
- Conference Proceedings
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