1.

Conference Proceedings
Conference Proceedings
1. Introduction of Depletion Stopper for Reduction of JFET Resistance for 4H-SiC Trench MOSFET
Y. Kagawa ; R. Tanaka ; N. Fujiwara ; K. Sugawara ; Y. Fukui
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.761-764,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. 4H-SiC Trench MOSFET with Bottom Oxide Protection
Y. Kagawa ; N. Fujiwara ; K. Sugawara ; R. Tanaka ; Y. Fukui
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.919-922,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
3.

Conference Proceedings
Conference Proceedings
3. Characterization of SiO2/4H-SiC Interface by Device Simulation and Temperature Dependence of On-Resistance of SiC MOSFET
K. Ohtsuka ; S. Hino ; A. Nagae ; R. Tanaka ; Y. Kagawa
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.993-996,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780