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33 results

Conference Proceedings

1. Al⁺ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

R. Nipoti ; A. Hallén ; A. Parisini ; F. Moscatelli ; S. Vantaggio

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.767-772, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET

F. Pezzimenti ; S. Bellone ; F.G. Della Corte ; R. Nipoti

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.942-945, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

3. Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H-SiC p⁺-i-n Diodes

L. di Benedetto ; G.D. Licciardo ; S. Bellone ; R. Nipoti

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.628-631, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

4. Ion Implanted Lateral p⁺-i-n⁺ Diodes on HPSI 4H-SiC

R. Nipoti ; F. Moscatelli ; A. Roncaglia ; F. Bonafè ; F. Mancarella

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.620-623, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

Conference Proceedings

5. High Temperature Variable Range Hopping in Heavy Al Implanted 4H-SiC

A. Parisini ; M. Gorni ; R. Nipoti

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.283-286, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

6. Controlling the Carbon Vacancy Concentration in 4H-SiC Subjected to High Temperature Treatment

H.M. Ayedh ; R. Nipoti ; A. Hallén ; B.G. Svensson

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.414-417, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

7. Formation and Annihilation of Carbon Vacancies in 4H-SiC

H.M. Ayedh ; V. Bobal ; R. Nipoti ; A. Hallén ; B.G. Svensson

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.331-336, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

8. 1950° C Annealing of Al⁺ Implanted 4H-SiC: Sheet Resistance Dependence on the Annealing Time

R. Nipoti ; A. Parisini ; S. Vantaggio ; G. Alfieri ; A. Carnera

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.523-526, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

Conference Proceedings

9. Forward Current of Al⁺ Implanted 4H-SiC Diodes: A Study on Periphery and Area Components

M. Puzzanghera ; R. Nipoti

Pub. info.:	Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy. pp.773-776, 2016. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	858

10.

Conference Proceedings

10. Isothermal Treatment Effects on the Carbon Vacancy in 4H Silicon Carbide

H.M. Ayedh ; R. Nipoti ; A. Hallén ; B.G. Svensson

Pub. info.:	Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France. pp.351-354, 2015. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	821-823

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