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Conference Proceedings

1. Al⁺ Implanted 4H-SiC: Improved Electrical Activation and Ohmic Contacts

R. Nipoti ; A. Hallén ; A. Parisini ; F. Moscatelli ; S. Vantaggio

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.767-772, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742

Conference Proceedings

2. Steady-State Analysis of a Normally-Off 4H-SiC Trench Bipolar-Mode FET

F. Pezzimenti ; S. Bellone ; F.G. Della Corte ; R. Nipoti

Pub. info.:	Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation. pp.942-945, 2013. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	740-742