1.

Conference Proceedings
Conference Proceedings
1. Simulation of the Temperature Dependence of Hall Carriers in Al Doped 4H-SiC
A. Nath ; R. Scaburri ; M.V. Rao ; R. Nipoti
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.237-240,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
2.

Conference Proceedings
Conference Proceedings
2. High Dose Al+ Implanted and Microwave Annealed 4H-SiC
R. Nipoti ; A. Nath ; M.V. Rao ; A. Hallén ; F. Mancarella
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.817-820,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Fully Ion Implanted Vertical p-i-n Diodes on High Purity Semi-Insulating 4H-SiC Wafers
R. Nipoti ; A. Nath ; Y.L. Tian ; F. Tamarri ; F. Moscatelli
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.985-988,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720