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11 results

Conference Proceedings

1. Post-Implantation Annealing of SiC: Relevance of the Heating Rate

R. Nipoti

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.561-566, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

2. X-Ray and AFM Analysis of Al2O3 Deposited by ALCVD on n-Type 4H-SiC

U. Grossner ; M. Servidori ; M. Avice ; O. Nilsen ; H. Fjellvag ; R. Nipoti ; B.G. Svensson

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.683-686, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

3. Analysis of the Electrical Activation of P+ Implanted Layers as a Function of the Heating Rate of the Annealing Process

M. Canino ; F. Giannazzo ; F. Roccaforte ; A. Poggi ; S. Solmi ; V. Raineri ; R. Nipoti

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.571-574, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

4. Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose

A. Poggi ; F. Moscatelli ; Y. Hijikata ; S. Solmi ; M. Sanmartin ; F. Tamarri ; R. Nipoti

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.639-642, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

5. Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation

Y. Hijikata ; S. Yoshida ; F. Moscatelli ; A. Poggi ; S. Solmi ; S. Cristiani ; R. Nipoti

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.651-654, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

Conference Proceedings

6. Improvement of Electron Channel Mobility in 4H SiC MOSFET by Using Nitrogen Implantation

F. Moscatelli ; R. Nipoti ; S. Solmi ; S. Cristiani ; M. Sanmartin

Pub. info.:	Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007. pp.699-702, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	600-603

Conference Proceedings

7. Characterization of Phosphorus Implanted n⁺/p Junctions Integrated as Source/Drain Regions in a 4H-SiC n-MOSFET

F. Moscatelli ; R. Nipoti ; A. Poggi ; S. Solmi ; S. Cristiani

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.687-690, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

8. C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al⁺ Implanted JTE p⁺n 4H-SiC Diodes

F. Fabbri ; F. Moscatelli ; A. Poggi ; R. Nipoti ; A. Cavallini

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.469-472, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

Conference Proceedings

9. Analysis of the Electron Traps at the 4H-SiC/SiO₂ Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen Pre-Implanted Layer

I. Pintilie ; F. Moscatelli ; R. Nipoti ; A. Poggi ; S. Solmi

Pub. info.:	Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain. pp.533-536, 2009. Aedermannsdorf, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	615-617

10.

Conference Proceedings

10. Effects of Very High Neutron Fluence Irradiation on p+n Junction 4H-SiC Diodes

F. Moscatelli ; A. Scorzoni ; A. Poggi ; M. Passini ; G. Pizzocchero ; R. Nipoti

Pub. info.:	Silicon carbide and related materials 2006 : ECSCRM 2006, Proceedings of the 6th European Conference on Silicon Carbide and Related Materials, Newcastle upon Tyne, UK, September 2006. pp.917-920, 2007. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	556-557

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