1.

Conference Proceedings
Conference Proceedings
1. Transient Enhanced Diffusion for Implanted Doses Exceeding the Threshold Dose for Amorphization and for Implants into Preamorphized Substrates
Prussin, S. ; Liu, P. ; Zhang, P.F.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.135-141,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4
2.

Conference Proceedings
Conference Proceedings
2. POINT DEFECT DETECTOR STUDIES OF OXIDIZED SILICON
Meng, H. L. ; Jones, K. S. ; Prussin, S.
Pub. info.: Structure and properties of interfaces in materials : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A..  pp.101-106,  1992.  Pittsburgh.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 238
3.

Conference Proceedings
Conference Proceedings
3. POINT DEFECT DETECTOR STUDIES OF Ge + IMPLANTED SILICON UPON OXIDATION
Meng, H. L. ; Prussin, S. ; Jones, K. S.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.253-258,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
4.

Conference Proceedings
Conference Proceedings
4. Role of Dose, Dose Rate, and Anneal Temperature on End-of-Range Dislocation Loops
Prussin, S. ; Pan, G.Z. ; Zhang, P.F.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.379-386,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-4