Mobility Characterization of p-Type and n-Type Strained Si1-x-yGexCy/Si Epilayer Hall Devices

Mobility Characterization of p-Type and n-Type Strained Si1-x-yGexCy/Si Epilayer Hall Devices

Author(s):

Peterson, J. J.

Publication title:

III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics : symposium held November 30-December 3, 1998, Boston, Massachusetts, U.S.A.

Title of ser.:

Materials Research Society symposium proceedings

Ser. no.:

535

Pub. Year:

1999

Page(from):

293

Pub. info.:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994416 [1558994416]

Language:

English

Call no.:

M23500/535

Type:

Conference Proceedings

Details

TDL ID:	ZA00018919
Series ID:	PA00000011
Conf. info. (Name):	Symposium on II-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics
Conf. info. (Number):	1998
Conf. info. (Venue):	Boston, MA, USA
Conf. info. (Date):	1998.11.30-1998.12.03

Similar Items:

1 Conference Proceedings Schottky Diodes on Si1-x-yGexCy Alloys Mamor, M., Guedj, C., Boucaud, P., Meyer, F., Bouchier, D., Bodnar, S., Regolini, J. L. MRS - Materials Research Society	7 Conference Proceedings Selective Deposition of 3C-SiC Epitaxially Grown on SOI Subtrates Eickhoff, M., Zappe, S., Nielsen, A., Krotz, G., Obermeier, E., Vouroutzis, N., Stoemenos, J. Trans Tech Publications
2 Conference Proceedings CHARACTERIZATION OF THE EFFECT OF Au/Al BONDPAD CORROSION ON MICROELECTRONIC DEVICE RELIABILITY Sorensen, N.R., Braithwaite, J.W., Peterson, D.W., Michael, J.R., Robinson, D.G., Strizich, M.P. Electrochemical Society	8 Conference Proceedings High Temperature 10 Bar Pressure Sensor Based on 3C-SiC/SOI for Turbine Control Applications Zappe, S., Franklin, J., Obermeier, E., Eickhoff, M., Moeller, H., Kroetz, G., Rougeot, C., Lefort, O., Stoemenos, J. Trans Tech Publications
3 Conference Proceedings Strong Deviation of the Lattice Parameter in Si1-x-yGexCy Epilayers From Vegard's Rule Stangl, J., Zerlauth, S., Schaffler, F., Bauer, G., Berti, M., Salvador, D. De, Drigo, A. V., Romanato, F. MRS - Materials Research Society	9 Conference Proceedings Raman Characterization of Strained GaNyAs1-y and InxGa1-xNyAs1-y Epilayers Tay, Li-Lin, Lockwood, David J., Gupta, James A., Wasilewski, Zbig R. Materials Research Society
4 Conference Proceedings DEFECT REDUCTION IN GaAs EPILAYERS ON Si SUBSTRATES USING STRAINED LAYER SUPERLATTICES El-Masry, N., Hamaguchi, N., Tarn, J. C. L., Karam,. N., Humphreys, T. P., Moore, D., Bedair, S. M., Lee, J. W., … Materials Research Society	10 Conference Proceedings Synthesis of high-quality Si1-yCy and Si1-x-yGexCy epitaxial layers on (100)Si by ion implantation and pulsed excimer laser crystallization Grob,J.-J., Fogarassy,E., Grob,A., Muller,D., Prevot,B., Stuck,R., de Unamuno,S., Boher,P., Stehle,M.X. SPIE-The International Society for Optical Engineering
5 Conference Proceedings Temperature Dependence of Hall Mobility in Strained Si1-xGex/Si1-x-yGexCy Kar,G.S., Dhar,A., Ray,S.K. SPIE - The International Society for Optical Engineering	11 Conference Proceedings (3.6) 5:20 - 5:40 PM - Epitaxially Strained SiGe Process to Improve Mobility in the PMOS Transistor Chidambaram, P., Smith, B., Hall, L., Bu, H., Chakravarthi, S., Kim, Y., Samoilov, A., Kim, A., Jones, P., Irwin, R., … Electrochemical Society
6 Conference Proceedings Characterization of Er-Doped III-V Nitride Epilayers Prepared by MOMBE Zavada, J. M., Wilson, R. G., Schwartz, R. N., MacKenzie, J. D., Abernathy, C. R., Pearton, S. J., Wu, X., Hommerich, U. MRS - Materials Research Society	12 Conference Proceedings Radiation-hard charge-coupled devices for the extreme ultraviolet variability experiment R. C. Westhoff, M. K. Rose, J. A. Gregory, G. D. Berthiaume, J. F. Seely Society of Photo-optical Instrumentation Engineers

1

2

3

4

5

6

7

8

9

10

11

12