1.

Conference Proceedings
Conference Proceedings
1. RAPID ISOTHERMAL ANNEALING OF N-IMPLANTED 6H-SiC LAYERS USED FOR FABRICATION OF p-n PHOTODIODES
Pensl, G. ; Helbig, R. ; Zhang, H. ; Ziegler, G. ; Lanig, P.
Pub. info.: Novel refractory semiconductors : symposium held April 21-23, 1987, Anaheim, California, U.S.A..  pp.195-200,  1987.  Pittsburgh, Penn..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 97
2.

Conference Proceedings
Conference Proceedings
2. HYDROGEN NEUTRALIZATION OF CHALCOGEN DOUBLE DONOR CENTERS IN SINGLE-CRYSTAL SILICON
Pensl, G. ; Roos, G. ; Stolz, P. ; Johnson, N. M. ; Holm, C.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.241-246,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
3.

Conference Proceedings
Conference Proceedings
3. *ELECTRONIC DEFECTS IN SILICON AFTER TRANSIENT ISOTHERMAL ANNEALING
Pensl, G. ; Schulz, M. ; Stolz, P. ; Johnson, N. M. ; Gibbons, J. F. ; Hoyt, J. L.
Pub. info.: Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A..  pp.347-358,  1984.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 23
4.

Conference Proceedings
Conference Proceedings
4. DLTS-STUDIES ON THE "NEW OXYGEN DONOR"IN HEAT TREATED AND HYDROGENERATED Cz-GROWN Si
Hoelzlien, Karlheinz ; Pensl, G. ; Schulz, M. ; Johnson N.M.
Pub. info.: Oxygen, carbon, hydrogen, and nitrogen in crystalline silicon : symposium held December 2-5, 1985, Boston, Massachusetts, U.S.A..  pp.481-486,  1986.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 59