1.

Conference Proceedings
Conference Proceedings
1. Growth of Scandium Magnesium Oxide on GaN
Onstine, A. H. ; Herrero, A. ; Gila, B. P. ; Kim, J. ; Mehandru, R. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.397-402,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
2.

Conference Proceedings
Conference Proceedings
2. The Oxide/Nitride Interface: A Study for Gate Dielectrics and Field Passivation
Gila, B. P. ; Luo, B. ; Kim, J. ; Mehandru, R. ; LaRoche, J. R. ; Onstine, A. H. ; Lambers, E. ; Siebein, K. ; Abernathy, C. R. ; Ren, F. ; Pearton, S. J.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.385-396,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
3.

Conference Proceedings
Conference Proceedings
3. Charge and Spin-Based Electronics Using ZnO Thin Films
Norton, D.P. ; Heo, Y.W. ; Ivill, M. ; Li, Y. ; Kwon, Y.W. ; Erie, J. M. ; Jones, M. ; Holloway, P.H. ; Pearton, S. J. ; Ren, F. ; Park, Z. V. ; Li, S. ; Hebard, A. F. ; Kelly, J.
Pub. info.: State-of-the-art program on compound semiconductors XLI and nitride and wide bandgap semiconductors for sensors, photonics, and electronics V : proceedings of the international symposia.  pp.276-286,  2004.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-06
4.

Conference Proceedings
Conference Proceedings
4. AlN-based Dilute Magnetic Semiconductors
Frazier, R. ; Thaler, G. ; Gila, J. ; Stapleton, J. ; Overberg, M. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.17-23,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
5.

Conference Proceedings
Conference Proceedings
5. Gaeless AlGaN/GaN HEMT Response to Block Co-Polymers
Kang, B. S. ; Louche, G. ; Duran, R S. ; Gnanou, Y. ; Pearton, S. J. ; Ren, F.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.39-45,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
6.

Conference Proceedings
Conference Proceedings
6. Effect of argon annealing of phosphorus-doped ZnO and (Zn,Mg)O thin-films-grown pulsed laser deposition (Invited Paper) [6337-56]
Li, Y. ; Kim, H. -S. ; Erie, J. -M. ; Ren, F. ; Pearton, S. J. ; Norton, D. P.
Pub. info.: Sixth international conference on solid state lighting : 14-17 August 2006, San Diego, California, USA.  pp.633708-,  2006.  Bellingham, Wash..  SPIE - The International Society of Optical Engineering
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6337
7.

Conference Proceedings
Conference Proceedings
7. W2B Based High Thermal Stability Ohmic Contacts to n-GaN
Khanna, Rohit ; Pearton, S. J. ; Kao, C. J. ; Kravchenko, I. ; Ren, F. ; Chi, G. C. ; Dabiran, A. ; Osinsky, A.
Pub. info.: GaN, AlN, InN and related materials : symposium held November 28-December 2, 2005, Boston, Massachusetts, U.S.A..  pp.341-350,  2006.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 892
8.

Conference Proceedings
Conference Proceedings
8. Comparison of implant isolation species for GaN field-effect transistor structure
Dang, G. ; Cao, X. A. ; Ren, F. ; Pearton, S. J. ; Han, J. ; Baca, A. G. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.68.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
9.

Conference Proceedings
Conference Proceedings
9. Processing and device performance of GaN power rectifiers
Zhang, A. P. ; Dang, G. T. ; Cao, X. A. ; Cho, H. ; Ren, F. ; Han, J. ; Chyi, J-I. ; Lee, C-M. ; Nee, T-E. ; Chuo, C-C. ; Chi, G-C. ; Chu, S. N. G. ; Wilson, R. G. ; Pearton, S. J.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.67.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
10.

Conference Proceedings
Conference Proceedings
10. High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges
Zhang, A. P. ; Dang, G. ; Ren, F. ; Cao, X. A. ; Cho, H. ; Lambers, E. S. ; Pearton, S. J. ; Shul, R. J. ; Zhang, L. ; Baca, A. G. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.66.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
11.

Conference Proceedings
Conference Proceedings
11. *Properties and effects of hydrogen in GaN
Pearton, S. J. ; Cho, H. ; Ren, F. ; Chyi, J-I. ; Han, J. ; Wilson, R. G.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W10.6.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
12.

Conference Proceedings
Conference Proceedings
12. Surface conversion effects in plasma-damaged p-GaN
Cao, X. A. ; Pearton, S. J. ; Dang, G. T. ; Zhang, A. P. ; Ren, F. ; Shul, R. J. ; Zhang, L. ; Hickman, R. ; Hove, J. M. Van
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W10.8.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
13.

Conference Proceedings
Conference Proceedings
13. Metal-oxide Semiconductor Field-effect Transistors using Single ZnO Nanowire
Heo, Young-Woo ; Kang, B. S. ; Tien, L. C. ; Kwon, Y. ; La-Roche, J. R. ; Gila, B. P. ; Ren, F. ; Pearton, S. J. ; Norton, D. P.
Pub. info.: Progress in compound semiconductor materials -- electronic and optoelectronic applications.  pp.327-332,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 829
14.

Conference Proceedings
Conference Proceedings
14. Sensitivity of Pt/ZnO Schottky Diode Characteristics to Hydrogen
Kim, S. ; Kang, B. S. ; Ren, F. ; Ip, K. ; Heo, Y. W. ; Norton, D. P. ; Pearton, S. J.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.152-160,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
15.

Conference Proceedings
Conference Proceedings
15. AlGaN/GaN-based Metal-Oxide Semiconductor Dipole-based Hydrogen Gas Sensor
Kang, B. S. ; Ren, F. ; Gila, B. P. ; Abernathy, C. R. ; Pearton, S. J.
Pub. info.: Proceedings of the Fourth International Symposium on Process Physics and Modeling in Semiconductor Technology.  pp.144-151,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-02
16.

Conference Proceedings
Conference Proceedings
16. Temperature Dependent Performance of GaN Schottky Diode Rectifiers
Cao, X. A. ; Dang, G. T. ; Zhang, A. P. ; Ren, F. ; Pearton, S. J. ; Lee, C. -M. ; Chuo, C. -C. ; Chyi, J. -I. ; Chi, G. C. ; Han, J. ; Chu, S. N. G. ; Wilson, R. G.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1631-1634,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
17.

Conference Proceedings
Conference Proceedings
17. HVPE-Grown AlGaN/GaN HEMTs
Luo, B. ; Ren, F. ; Mastro, M. A. ; Tsvetkov, D. ; Pechnikov, A. ; Soukhoveev, V. ; Dmitriev, V. ; Baik, K. H. ; Pearton, S. J.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.45-56,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
18.

Conference Proceedings
Conference Proceedings
18. AlGaN/GaN Structures Grown by HVPE: Growth and Characterization
Mastro, M. A. ; Tsvetkov, D. V. ; Pechnikov, A. I. ; Soukhoveev, V. A. ; Gainer, G. H. ; Usikov, A. ; Dmitriev, V. ; Luo, B. ; Ren, F. ; Baik, K. H. ; Pearton, S. J.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.39-44,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
19.

Conference Proceedings
Conference Proceedings
19. Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface
Ren, F. ; Luo, B. ; Kim, J. ; Mehandru, R. ; Gila, B. P. ; Onstine, A. H. ; Abernathy, C. R. ; Pearton, S. J. ; Fitch, R. ; Gillespie, J. ; Jenkins, T. ; Sewell, J. ; Via, D. ; Crespo, A. ; Irokawa, Y.
Pub. info.: New applications for wide-bandgap semiconductors : symposium held April 22-24, 2003, San Francisco, California, U.S.A..  pp.291-304,  2003.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 764
20.

Conference Proceedings
Conference Proceedings
20. Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers
Nigam, S. ; Kim, J. ; Luo, B. ; Ren, F. ; Chung, G. ; MacMillan, M. F. ; Williams, J. R. ; Pearton, S. J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.144-153,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14
21.

Conference Proceedings
Conference Proceedings
21. High Current Bulk GaN Schottky Rectifier
Ip, K. ; Baik, K. H. ; Luo, B. ; Ren, F. ; Pearton, S. J. ; Park, S. S. ; Park, Y. J. ; Zhang, A. P.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.112-119,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14
22.

Conference Proceedings
Conference Proceedings
22. Processing of Very Low Dark Current High Speed Infrared Photodetectors for Telecommunication Applications
Mehandru, R. ; Luo, B. ; Ren, F. ; Shen, P. ; Aliberti, K. ; Chu, S. N. G. ; Lothian, J. R. ; Pearton, S. J.
Pub. info.: State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia.  pp.166-173,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-14