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17 results

Conference Proceedings

1. BEHAVIOUR OF IMPLANTED HYDROGEN IN GALLIUM PHOSPHIDE SINGLE CRYSTALS

Zavada, J. M. ; Wilson, R,. G. ; Novak, S. W. ; Pearton, S. J. ; Neida, Von A. R.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.457-462, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

2. IMPLANT ISOLATION MECHANISMS IN GaAs., A1GaAs, InP AND InGaAs

Pearton, S. J. ; Abernathy, C. R. ; Hobson, W. S. ; Neida, Von A. A.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.433-438, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

Conference Proceedings

3. *THE GROWTH, CHARACTERIZATION AND ELETRONIC DEVICE APPLICATIONS OF GaAs/Si

Jordan, A. S. ; Pearton, S. J. ; Hobson, W. S.

Pub. info.:	III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.. pp.261-278, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	145

Conference Proceedings

4. ELECTRICAL AND OPTICAL PROPERTIES OF VANADIUM IN OMVPE-GROWN GaAs

Hobson, W. S. ; Pearton, S. J. ; Swaminathan, V. ; Jordan, A. S. ; Kao, Y. J. ; Haegel, M. ; Kanber, H.

Pub. info.:	III-V heterostructures for electronic/photonic devices : symposium held April 24-27, 1989, San Diego, California, U.S.A.. pp.125-130, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	145

Conference Proceedings

5. FORMATION OF INSULATING LAYERS IN GaAs-A1GaAs HETEROSTRUCTURES

Hobson, W. S. ; Pearton, S. J. ; Abernathy, C. R. ; von Neida, A. E.

Pub. info.:	Chemistry and defects in semiconductor heterostructures. pp.397-402, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	148

Conference Proceedings

6. RAPID ANNEALING OF RIE-INDUCED DDMAGE IN GaAs AND A1FGaAs

Pearton, S. J. ; Hobson, W. S. ; Chakrabarti, U. K. ; Short, K. T. ; White, A. E. ; Jnes, K. S

Pub. info.:	Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A.. pp.399-404, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	146

Conference Proceedings

7. *HYDROGEN IN SILICON

Corbett, J. W. ; Lindstorm, J. L. ; Pearton, S. J.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.229-240, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

8. ACTIVATION CHARACTERISTICS OF IMPLANTED DOPANTS IN InAs, GaSb AND GaP AFTER RAPID THERMAL ANNEALING

Von Neida, A. R. ; Short, K. T. ; Brown, J. M. ; Pearton, S. J.

Pub. info.:	Fundamentals of beam-solid interactions and transient thermal processing : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.689-694, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	100

Conference Proceedings

9. LATTICE-MATCHED GaAs/Ca0.45Sr0.55F2.Ge(100) HETEROSTRUCTURES GROWN BY MOLECULAR BEAM EPITAXY

Tu, C. W. ; Beggy, J. C. ; Baiocchi, F. A. ; Abys, S. M. ; Pearton, S. J. ; Hsieh, S. J. ; Kopf, R. F. ; Caruso, R. ; Jordan, A. S.

Pub. info.:	Heteroepitaxy on silicon II : symposium held April 21-23, 1987, Anaheim, California, U.S.A.. pp.359-364, 1987. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	91

10.

Conference Proceedings

10. *EXTENDED X-RAY ABSORPTION FINE STRUCTURE STUDIES OF IMPURITIES IN SEMICONDUCTORS

Sette, F. ; Pearton, S. J. ; Poate, J. M. ; Rowe, J. E.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.515-526, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

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