1.

Conference Proceedings
Conference Proceedings
1. Selective Etching of Wide-Bandgap Nitrides
Shul, R. J. ; Willison, C. G. ; Bridges, M. M. ; Han, J. ; Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Donovan, S. M.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.155-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
2.

Conference Proceedings
Conference Proceedings
2. Hydrogen Passivation of Er-Doped AlN
Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Hommerich, U. ; Zavada, J. M. ; Ren, F. ; Wilson, R. G. ; Schwartz, R. N.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.169-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
3.

Conference Proceedings
Conference Proceedings
3. In Situ Monitoring of Etch Byproducts During Reactive Ion Beam Etching of GaAs in Chlorine/Argon
Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R. ; Vawter, G. A. ; Shul, R. J. ; Bridges, M. M. ; Willison, C. G.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.191-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
4.

Conference Proceedings
Conference Proceedings
4. High-Temperature Photoluminescence and Photo-luminescence Excitation Spectroscopy of Er-Doped Gallium Nitride
Hommerich, U. ; Thaik, Myo ; Robinson-Brown, T. ; MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Wilson, R. G. ; Schwartz, R. N. ; Zavada, J. M.
Pub. info.: Nitride semiconductors : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A..  pp.685-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 482
5.

Conference Proceedings
Conference Proceedings
5. Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing
Maeda, T. ; Lee, J. W. ; Abernathy, C. R. ; Pearton, S. J. ; Ren, F. ; Constantine, C. ; Shul, R. J.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.209-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510
6.

Conference Proceedings
Conference Proceedings
6. Comparison of Novel Chlorine, Bromine, and Iodine Plasma Chemistries for Anisotropic Trench Etching in GaN, InN, and AIN
Cho, Hyun ; Maeda, T. ; MacKenzie, J. D. ; Donovan, S. M. ; Abernathy, C. R. ; Pearton, S. J. ; Shul, R. J. ; Han, J. ; Ren, F.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.501-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
7.

Conference Proceedings
Conference Proceedings
7. Ultrahigh Implant Activation Efficiency in GaN Using Novel High Temperature RTP System
Cao, X. A. ; Abernathy, C. R. ; Singh, R. K. ; Pearton, S. J. ; Fu, M. ; Sarvepalli, V. ; Sekhar, J. A. ; Zolper, J. C. ; Rieger, D. J. ; Han, J. ; Drummond, T. J. ; Shul, R. J. ; Wilson, R. G.
Pub. info.: Wide-bandgap semiconductors for high power, high frequency, and high temperature : symposium held April 13-15, 1998, San Francisco, California, U.S.A..  pp.463-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 512
8.

Conference Proceedings
Conference Proceedings
8. Comparison of Dry-Etch Techniques for GaN, InN, and AlN
Shul, R. J. ; Vawter, G. A. ; Willison, C. G. ; Bridges, M. M. ; Lee, J. W. ; Pearton, S. J. ; Abernathy, C. R.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.103-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
9.

Conference Proceedings
Conference Proceedings
9. Wet Chemical Etching Survey of III-Nitrides
Cho, Hyun ; Hays, D. C. ; Vartuli, C. B. ; Pearton, S. J. ; Abernathy, C. R. ; MacKenzie, J. D. ; Ren, F. ; Zolper, J. C.
Pub. info.: Power semiconductor materials and devices : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A..  pp.265-,  1998.  Warrendale, Penn..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 483
10.

Conference Proceedings
Conference Proceedings
10. Growth and Luminescence Properties of III-N:Er Materials Doped During Chemical-Beam Epitaxy
MacKenzie, J. D. ; Abernathy, C. R. ; Pearton, S. J. ; Hommerich, U. ; Seo, J. T. ; Ren, F. ; Wilson, R. G. ; Chen, P. ; Zavada, J. M.
Pub. info.: Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.325-,  1998.  Warrendale, Pa.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 510