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16 results

Conference Proceedings

1. Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode laser characteristics

Zhao, Y.-R. ; Xin, Y. ; Wang, R. ; Vilela, M.F. ; Smolykov, G.A. ; Osinski, M.

Pub. info.:	Design, fabrication, and characterization of photonic devices : 27-30 November 2001, Singapore. pp.237-249, 2001. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4594

Conference Proceedings

2. Quaternary InAIGaN-based multiquantum wells for ultraviolet light-emitting diode application

Guo, S. ; Pophristic, M. ; Lee, D.S. ; Peres, B. ; Ferguson, I.T. ; Lee, J. ; Osinski, M.

Pub. info.:	Solid state lighting II : 9-11 July, 2002, Seattle, Washington, USA. pp.18-25, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4776

Conference Proceedings

3. MOCVD Growth and Characterization of InNAs on GaAs - A New Narrow-Gap Semiconductor (Invited)

Osinski, M. ; Nuntawong, N. ; Cao, H. ; Zhmayev, F. ; El-Emawy, A.-R.A.

Pub. info.:	State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia. pp.60-71, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-14

Conference Proceedings

4. Monolithic Integration of Optoelectronic Devices Using Quantum Well Intermixing (Invited)

Osinski, M.

Pub. info.:	State-of-the-art program on compound semiconductors XXXVII (SOTAPOCS XXXVII) and narrow bandgap optoelectronic materials and devices : proceedings of the international symposia. pp.196-215, 2002. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-14

Conference Proceedings

5. Nonlinear mode interaction as a mechanism to obtain slow/fast light in diode lasers [6115-30]

Eliseev, P. G. ; Cao, H. ; Liu, C. ; Smolyakov, G. A. ; Osinski, M.

Pub. info.:	Physics and Simulation of Optoelectronic Devices XIV. pp.61150U-, 2006. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	6115

Conference Proceedings

6. Monolithically integrated twin ring diode lasers with quantum-dot active region [6115-71]

Cao, H. ; Gray, A. L. ; Lester, L. F. ; Osinski, M.

Pub. info.:	Physics and Simulation of Optoelectronic Devices XIV. pp.611521-, 2006. Bellingham, Wash.. SPIE - The International Society of Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	6115

Conference Proceedings

7. Pressure tuning of high-power laser diodes

Adamiec, P. ; Dybala, F. ; Bercha, A. ; Bohdan, R. ; Trzeciakowski, W. ; Osinski, M.

Pub. info.:	High-Power Diode Laser Technology and Applications. pp.158-165, 2003. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4973

Conference Proceedings

8. Electrical-thermal-optical simulation of GaAs/AlGaAs oxide-confined VCSELs

Smagley, V.A. ; Lu, M. ; Smolyakov, G.A. ; Eliseev, P.G. ; Osinski, M. ; Riely, B.P. ; Shen, H. ; Simonis, G.J.

Pub. info.:	Physics and Simulation of Optoelectronic Devices XI. pp.332-342, 2003. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4986

Conference Proceedings

9. Properties of InGaN/AlInGaN/AlGaN quantum-well UV light-emitting diodes

Lee, J. ; Eliseev, P.G. ; Osinski, M. ; Lee, D.-S. ; Florescu, D.I. ; Guo, S. ; Pophristic, M.

Pub. info.:	Physics and Simulation of Optoelectronic Devices XI. pp.595-607, 2003. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4986

10.

Conference Proceedings

10. Effects of resonant mode coupling on near- and far-field characteristics of InGaN-based lasers

Smolyakov, G.A. ; Eliseev, P.G. ; Osinski, M.

Pub. info.:	Physics and Simulation of Optoelectronic Devices X. pp.563-573, 2002. Bellingham, Wash.. SPIE-The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	4646

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