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12 results

Conference Proceedings

1. Drain Engineering of Sub-Quarter-μm MOSFET Devices

Tsai, J.-Y. ; Osburn, C.M.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.429-440, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

2. RTP for Advanced Device Fabrication using Shallow, Elevated, and Silicided Junctions

Osburn, C.M.

Pub. info.:	Advances in rapid thermal processing : proceedings of the symposium. pp.197-206, 1999. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-10

Conference Proceedings

3. Evaluation of Ultra-Thin Gate Evaluation of Ultra-Thin Gate Stack Dielectrics for 0.1 jim PMOSFETs

Srivastava, A. ; Osburn, C.M. ; Yee, K.F. ; Heinisch, H.H. ; Vogel, E.M ; Abmed, K.Z. ; Wang, Z. ; Min, K. ; TimberJoke, B. ; Parker, C. ; Worimnan, J.J. ; Hauser, J.R.

Pub. info.:	Advances in rapid thermal processing : proceedings of the symposium. pp.81-88, 1999. Pennington, N. J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-10

Conference Proceedings

4. Ultra Shallow Junctions: Formation, Characterization, and Modeling

Osburn, C.M. ; Chevacharoenkul, S. ; Wang, Q.F. ; Tsai, J.Y. ; Cowen, A. ; Rose, J. ; Zhang, X. ; Kellam, M.

Pub. info.:	Proceedings of the fourth International Symposium on Ultra Large Scale Integration Science and Technology : ULSI science and technology/1993. pp.146-157, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-13

Conference Proceedings

5. A 0.18 μm CMOS Technology for Elevated Source/Drain MOSFETs Using Selective Silicon Epitaxy

Srivastava, A. ; Sun, J. ; Bellur, K. ; Bartholomew, R. ; O'Neil, P. ; Celik, M. ; Osburn, C.M. ; Masnari, N.A. ; OEztuerk, M.C. ; Westhoff, R. ; Fowler, B.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.571-586, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

6. Parasitic Resistance Considerations of Using Elevated Source/Drain for Sub-0.25 μm MOSFET Technology

Sun, J. ; Srivastava, A. ; Bartholomew, R.F. ; Bellur, K. ; Osburn, C.M. ; Masnari, N.A.

Pub. info.:	ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology. pp.587-600, 1997. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	97-3

Conference Proceedings

7. PREDICT1.6: MODELING OF METAL SILICIDE PROCESSES

Osburn, C.M. ; Tsai, J.Y. ; Wang, Q.F. ; Rose, J. ; Cowen, A.

Pub. info.:	Proceedings of the Third International Symposium on Process Physics and Modeling in Semiconductor Technology. pp.576-591, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-6

Conference Proceedings

8. SILICON CONSUMPTION DURING SELF-ALIGNED TITANIUM SILICIDE FORMATION ON SHALLOW JUNCTIONS

Smith, P.L. ; Osburn, C.M. ; Wen, D.S. ; McGuire, G.

Pub. info.:	Layered structures : heteroepitaxy, superlattices, strain, and metastability : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.299-306, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	160

Conference Proceedings

9. AGGLOMERATION OF COBALT SILICIDE FILMS

Xiao, Z.G. ; Rozgonyi, G.A. ; Canovai, C.A. ; Osburn, C.M.

Pub. info.:	Evolution of thin-film and surface microstructure : symposium held November 26-December 1, 1990, Boston, Massachusetts, U.S.A.. pp.101-106, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	202

10.

Conference Proceedings

10. ION IMPLANTATION INDUCED EFFECTS AT POLYSILICON GATE FEATURE EDGES

Stinson, M.G. ; Smith, P.L. ; Osburn, C.M.

Pub. info.:	Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.733-738, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	157

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