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36 results

Conference Proceedings

1. Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment

Kinoshita, A. ; Senzaki, J. ; Katou, M. ; Harada, S. ; Okamato, M. ; Nishizawa, S. ; Fukuda, K. ; Morigasa, F. ; Endou, T. ; Isii, T. ; Yashima, T.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.803-806, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties

Ota, C. ; Nishio, J. ; Hatakeyama, T. ; Shinohe, T. ; Kojima, K. ; Nishizawa, S. ; Ohashi, H.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1175-1178, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Recent Progress of SiC Hot-Wall Epitaxy and Its Modeling

Nishizawa, S. ; Pons, M.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.129-134, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid

Bahng, W. ; Kitou, Y. ; Nishizawa, S. ; Yamaguchi, H. ; Khan, M. N. ; Oyanagi, N. ; Arai, K. ; Nishino, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.103-106, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

5. Numerical simulation of SiC processes: A characterization tool for the design of epitaxial structures in electronics

Pans, M. ; Nishizawa, S. ; Wettmann, P. ; Ucar, M. ; Blanquet, E. ; Dedulle, J. M. ; Baillet, F. ; Chaussende, D. ; Bernard, C. ; Madar, R.

Pub. info.:	EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium. pp.1-12, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-09

Conference Proceedings

6. Shape of SiC Bulk Single Crystal Grown by Sublimation

Nishizawa, S. ; Kitou, Y. ; Bahng, W. ; Oyanagi, N. ; Khan, M. N. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.99-102, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

7. SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray Technique

Oyanagi, N. ; Nishizawa, S. ; Kato, T. ; Yamaguchi, H. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.75-78, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

8. Pressure Effect in Sublimation Growth of Bulk SiC

Kitou, Y. ; Bahng, W. ; Nishizawa, S. ; Nishino, S. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.83-86, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

9. Beryllium Implantation Doping of Silicon Carbide

Henkel, T. ; Tanaka, Y. ; Kobayashi, N. ; Nishizawa, S. ; Hishita, S.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.953-956, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(2)

10.

Conference Proceedings

10. Temperature Gradient Effect on SiC Epitaxy in Liquid Phase

Khan, M. N. ; Nishizawa, S. ; Bahng, W. ; Arai, K.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.233-236, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

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